Double magnetic tunnel junctions suitable for automotive memory applications
Published : 13 December 2016
There is an increase interest in microelectronics industry for a new type of magnetic non-volatile memory called STT-MRAM. In these memories the storage elements are magnetic tunnel junctions which consist of two ferromagnetic layers separated by a thin tunnel oxide barrier (MgO). They are about to be introduced in products for consumer electronics. It is envisioned that they could play also a very important role in industrial and automotive applications but for the latter, the specifications are much more stringent in terms of reliability and operating temperatures (up to 150°C instead of 80°C for consumer electronics). During this thesis we propose to explore several routes allowing to increase the performances of these memories in terms of switching speed, power consumption and operating range.