Thermal treatment for advanced microelectronics using a nanosecond ultraviolet laser

Published : 13 December 2016

In the framework of an ambitious research program dealing with thermal treatments for microelectronics, CEA-LETI is about to install a new piece of equipment allowing annealing by a nanosecond pulsed ultraviolet laser. This innovative thermal treatment enables processes at very high temperatures with extremely short durations, leading to heat confinement in the very first micrometers below the surface. Thanks to these unprecedented features, such nanosecond laser process is planned to be the next annealing technology generation with huge expectations especially for electronic devices such as advanced CMOS and microsystems (MEMS).

The objective of the proposed research is to investigate nanosecond UV laser thermal treatment of Si- and SiGe-based thin films, in both below and above melting regimes. This research will combine experimental work in clean rooms, structural and electrical characterizations, and multi-physics simulations. Activation of the dopants (B, P …) introduced in the thin films directly during their deposition by epitaxy or by a subsequent ion implantation will be explored, especially for very high concentrations. The PhD student will have to identify some of the nanosecond laser annealing limits, including an assessment of the crystalline quality of the monocrystalline layers submitted to such process and the dopant deactivation if any by a subsequent thermal budget.

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