Congress Infos Europe 2011 Grenoble / Minatec

INFOS 2011 > Abstracts results

INFOS 2011 accepted abstracts; alphabetical order by authors names. (download pdf file)

First name	Last name	Title	Presentation
Christoph	Adelmann	Atomic-layer deposition of TaSiOx thin films as gate dielectrics for advanced semiconductor devices	Poster
Valeri	Afanas'ev	Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission	Oral
Valeri	Afanas'ev	Electron spin resonance spectroscopy of defects in low-k oxide insulators (k=2.5 – 2.0)	Oral
Selma	Amara	Duty Cycle Effect on Barrier Breakdown in MgO Magnetic Tunnel Junctions	Poster
Esteve	Amat	CHC degradation of strained devices based on SiON and high-k gate dielectric materials	Poster
Antonio	Arreghini	Effect of high temperature annealing on tunnel oxide properties in TANOS devices	Oral
Nuria	Ayala	NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETS and their impact on circuit performance	Oral
Canan	Baristiran Kaynak	Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material	Poster
Sylvain	Baudot	Understanding reversal effects of metallic Aluminum introduced in HfSiON/TiN PMOSFETs	Oral
Albin	Bayerl	Reliability and gate conduction variability of HfO2-based MOS devices	Poster
Thomas	Benoist	Experimental Investigation of ESD Design Window for Fully Depleted SOI N-MOSFETs	Poster
Jan Felix	Binder	Charge trapping in substoichiometric germanium oxide	Oral
T.	Boutchacha	Improved low frequency noise model for MOSFET operated in non-linear region	Poster
Nicolas	Breil	Investigation of reoxidation mechanisms in nitrided tunnel oxides	Poster
Laurent	Breuil	Optimization of gate stack parameters towards 3D-SONOS application	Oral
Peter	Broqvist	Could valence alternation pairs affect the valence band offset at Ge/GeO2 interfaces?	Poster
Pauline	Calka	Resistance switching in HfO2-based OxRRAM devices	Poster
Yao-Chung	Chang	Atomic-layer-deposited Al2O3 and HfO2 on GaN: a comparative study on interfaces and electrical characteristics	Oral
Sungjae	Chang	A FinFET Memory with Remote Carrier Trapping in ONO Buried Insulator	Oral
Yu-Hsing	Chang	Atomic layer deposition of Al2O3 on pristine Ga-rich n-GaAs(001)-4x6 surface	Poster
Lun-Lun	Chen	MOS devices with tetragonal ZrO2 as gate dielectric formed by annealing ZrO2/Ge/ZrO2 laminate	Poster
Ya-Ping	Chiu	Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (100) using scanning tunneling microscopy	Oral
S.J	Clark	On the ESR Identification of the Oxygen Vacancy in HfO2	Oral
Gabriele	Congedo	Stack engineering of TANOS charge-trap Flash memory cell using high-k ZrO2 grown by ALD as charge trapping layer	Oral
Alan	Craven	Nanoanalysis of a sub-nanometre reaction layer in a metal inserted high-k gate stack	Oral
Malte	Czernohorsky	Influence of Metal Gate and Capping Film Stress on TANOS Cell Performance	Oral
Rytis	Dargis	Single crystalline rare-earth-metal oxide as buried insulator layer for SOI structures	Poster
Pierre	Delcroix	SiON and SiO2/HfSiON Gate oxides Time Dependent Dielectric Breakdown measurements at Nanoscale in ultra high Vacuum	Oral
Dann	Dewulf	Interfacial reactions of Gd- and Nb-oxide based high-k layers deposited by aqueous CSD	Poster
Panagiotis	Dimitrakis	MIS memory capacitors with molecular beam deposited GaN QDs	Poster
Eylem	Durgun Özben	LaScO3 as a higher-k dielectric for p-MOSFETs	Oral
Amer	El Hajj Diab	Low-Frequency Noise in SOI Pseudo-MOSFET with Pressure Probes	Poster
Mario	El Kazzi	1.2 nm Capacitance Equivalent Thickness gate stacks on Si-passivated GaAs	Oral
J.	ElHusseini	New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs	Poster
Sivan	Fadida	Band alignment of Hf- Zr oxides on Al2O3\GeO2\Ge stacks	Poster
Jacopo	Franco	On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs	Oral
Martin	Frank	Epitaxial strontium oxide layers on silicon for TiN/HfO2 gate stack scaling	Oral
Karol	Frohlich	Post-deposition processing and oxygen content of TiO2-based DRAM capacitors	Poster
Chung-Hao	Fu	Improved electrical characteristic and reliability of Ge MOSFET device with nitrided high-k gate dielectric by plasma immersion ion implantation	Poster
Yuan	Gao	On the Dynamic NBTI of the metal/high-k gate stack p-MOSFET	Oral
Xavier	Garros	Interface States Characterization in Heterojunction Solar Cells from CV-GV. Measurements and Modeling	Oral
Ahmed	Gharbi	Shallow Trench Isolation based on selective formation of oxidized porous silicon	Poster
Gabriella	Ghidini	BE-TANOS: feasibility and technology limitations	Oral
Evangelos	Golias	Ge-related impurities in high-k oxides: carrier traps and interaction with native defects	Oral
Yuri	Gomeniuk	Transport and interface states in high-k LaSiOx dielectric	Poster
Matthias	Grube	Phase stabilization of sputtered strontium zirconate	Oral
J.	Gyani	A Comparative 1/f Noise Study of GeOI wafers obtained by the Ge Enrichment Technique & the Smart-Cut Technology	Poster
Ya-Yin	Hsu	A low gate leakage current and equivalent oxide thickness for MOSFET with Ti/HfO2 higher-k gate dielectric	Oral
Boris	Hudec	Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes	Oral
Yury	Illarionov	Electron tunneling in MIS capacitorswith the MBE-grown fluoride layers on Si(111) and Ge(111)	Poster
Tae-Young	Jang	Bi-modal BTI degradation mechanisms of metal-oxide-semiconductor field effect transistors with La incorporated hafnium based dielectric	Oral
Jae Kyeong	Jeong	The impact of gate dielectric materials and high pressure oxygen annealing on the photo-enhanced negative bias instability of InGaZnO TFTs	Poster
Sofia	Johansson	Temperature and Annealing Effects on InAs Nanowire MOSFETs	Poster
Pi-Chun	Juan	Submission title: Influence of La Substitution on the Electrical Properties of Metal-Ferroelectric (BiFeO3)-Insulator (CeO2)-Semiconductor Nonvolatile Memory Structures	Poster
Seungjae	Jung	Resistive Switching Characteristics of Solution-processed TiOx for Next-generation Memory Application; Transparency, Flexibility, and Nano-scale Memory Feasibility	Poster
K.	Keunen	Inherent Si dangling bond defects at the thermal (110)Si/SiO2 interface	Oral
Dong-Seok	Kim	Performance Enhancement of GaN SB-MOSFET on Si substrate Using Two-step Growth Method	Poster
Ki-Won	Kim	Charge Trapping and Interface Characteristics in Normally-off Al2O3/GaN-MOSFETs	Poster
Daisuke	Kitayama	Effect of Thin Si Insertion at Metal Gate/High-k Interface on Electrical Characteristics of MOS Device with La2O3	Oral
Hannu-Pekka	Komsa	Identification of defect levels at In(x)Ga(1-x)As/oxide interfaces through hybrid functionals	Oral
Stefano	Larentis	Filament diffusion model for simulating reset and retention processes in RRAM	Oral
Jung-Chan	Lee	Study on Electrical Characteristics and Reliability of Fluorinated HfO2 for HKMG	Poster
Jan	Lehmann	Millisecond flash-lamp annealing of LaLuO3	Poster
Yiming	Li	Nanosized Metal Grains Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-k / Metal Gate Bulk FinFET Devices	Oral
Yiming	Li	Interface traps and random dopants induced characteristic fluctuations in emerging mosfets	Oral
Huanglong	Li	Atomic bonding and disorder at Ge:GeO2 interfaces	Poster
Liang	Lin	Shifting Schottky Barrier Heights with Ultra-thin Dielectric layers	Oral
Li-Jung	Liu	Enhanced operation and retention characteristics in charge-trapping flash memory device with novel Si/Ge super-lattice channel	Oral
Gerald	Lucovsky	Remote Plasma-Deposited GeO2 with Quartz-like Ge- and O-Local Bonding: Band Edge State Comparisons with SiO2and Si3N4 Dielectrics	Oral
Gerald	Lucovsky	O-vacancies in transition metal oxides: coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides	Poster
Mindaugas	Lukosius	Metal-Insulator-Metal capacitors with MOCVD grown Ce-Al-O as a dielectric	Poster
John	Lyons	The role of oxygen native defects and impurities in HfO2 and ZrO2	Oral
Hannes	Mähne	The influence of crystallinity on the resistive switching behavior of TiO2	Poster
C.	Martinez	Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics	Oral
Eugenie	Martinez	Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack	Poster
Lia	Masoero	Defects-induced gap states in hydrogenated gamma-alumina used as blocking layer for NVM	Oral
M.	Matsui	Characterization of Chemical Bonding Features at Metal/GeO2 Interfaces by X-ray Photoelectron Spectroscopy	Oral
Takeo	Matsuki	Identification of electron trap location degrading low-frequency noise and PBTI in poly-Si/HfO2/IFL gate-stacked MOSFETs	Poster
Yury	Matveyev	Effects of biasing at elevated temperature on the chemical and electronic structure of Pt/HfO2/Si stacks	Poster
Keith	McKenna	Grain boundary mediated leakage current in polycrystalline HfO2 films	Oral
Clement	Merckling	Molecular Beam Epitaxial Growth and Passivation of III-Sb materials for advanced p-MOSHEMT devices	Oral
Enrique	Miranda	Model for the leakage current decay in high-field stressed Al/HfYOx/GaAs structures	Poster
Ivona	Mitrovic	Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks	Oral
Mircea	Modreanu	Investigation of bulk defects in amorphous and crystalline HfO2 thin films	Oral
Paul-Henry	Morel	Study of CVD Nanowire MOS structures for interconnect level devices	Poster
Yasushi	Nakasaki	Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen and its interaction with oxygen vacancy and substitutional nitrogen	Oral
Muhammad Adi	Negara	Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric	Oral
Gang	Niu	Epitaxy of BaTiO3 thin film on Si (001) using a STO buffer layer for non-volatile memory applications	Poster
Akiko	Ohata	Performance of (110) P-channel SOI-MOSFETs Fabricated by Deep-Amorphization and Solid-Phase Epitaxial Regrowth Processes	Oral
Felix	Palumbo	Soft Breakdown in Irradiated High-K Nanolaminates	Poster
M.A.	Pampillón	Towards metal electrode interface scavenging of rare-earth scandates: a Sc2O3 and Gd2O3 study	Poster
Luigi	Pantisano	Toward barrier height modulation in HfO2/TiN by oxygen scavenging - Dielectric defects or Metal Induced Gap States?	Oral
Jubong	Park	Resistive Switching Characteristics of Ultra-thin TiOx with Carbon-based Selection Device	Oral
Timofey	Perevalov	Electronic and optical properties of hafnia polymorphs	Poster
Mihaela	Popovici	Improved EOT and leakage current for metal-insulator-metal capacitor stacks with rutile TiO2	Oral
Agham	Posadas	Epitaxial integration of a ferromagnet with Si (100)	Oral
Nagarajan	Raghavan	Evidence for Compliance Controlled Oxygen Vacancy and Metal Filament based Resistive Switching Mechanisms in RRAM	Oral
Noel	Rodriguez	Three-Interface Pseudo-MOSFET Models for Characterization of Ultrathin SOI Wafers	Oral
Gabriele	Sclauzero	Stability and charge transfer at the interface between SiC(0001) and epitaxial graphene	Poster
Sonja	Sioncke	Atomic Layer deposition of Al2O3 on S-passivated Ge.	Oral
A. M.	Sonnet	Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs	Oral
Noriyuki	Taoka	Quantitative Analysis of Conductance Curves in Al2O3/InP Interfaces	Oral
R.	Timm	Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy	Oral
Sauveur	Tirano	Accurate analysis of parasitic current overshoot during forming operation in RRAMs	Oral
María	Toledano Luque	Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics	Oral
Gilberto	Umana-Membreno	Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates	Oral
Y.	Urabe	On the Mechanisms Limiting Mobility in InP/InGaAs Buried Channel nMISFETs	Oral
Emanuele	Verrelli	Optimization of Hafnium oxide for use in nanoparticle memories	Poster
Damian	Walczyk	Resistive switching characteristics of 1T1R HfO2-based RRAM in CMOS	Oral
Jing	Wan	Gate-Induced Drain Leakage in FD-SOI devices: What the TFET teaches us about the MOSFET	Poster
W	Wang	Is interfacial chemistry correlated to gap states for high-k/III-V interfaces?	Oral
Guobin	Wei	Impact of Insertion of Ultrathin TaOx Layer at the Pt/TiO2 Interface on Resistive Switching Characteristics	Poster
Zong-Hao	Ye	Improved retention characteristic of charge-trapped flash device with sealing layer/Al2O3 or Al2O3/high-k stacked blocking layers	Poster
Chadwin	Young	Evaluation of the N- and La-induced defects in the High-? Gate Stack using Low Frequency Noise Characterization	Oral
Darius	Zade	Improving electric characteristics of HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques and post deposition anneals	Poster
Rui	Zhang	Impact of GeOx Interfacial Layer Thickness on Al2O3/Ge MOS interface Properties	Oral
P.	Zhang	The Structural and Electrical Properties of the SrTa2O6/In0.53Ga0.47As/InP System	Oral