Charge to spin conversion in HgTe topological insulators
Published : 11 January 2019
The intrinsic spin-momentum locking of Dirac fermions at the surface or interface of topological insulators opens the path towards novel spintronic effects and applications.
Strained HgTe/CdTe is a model topological insulator and a very good candidate to design and demonstrate new spintronic devices exploiting the very large charge to spin conversion efficiency expected for such 2D systems. This postdoc position aims at realizing the first demonstration of the direct charge to spin conversion in topological HgTe nanostructures and use this demonstration as a building block for spin based logic elements.