FDSOI technology scaling beyond 10nm node

Published : 11 January 2019

FDSOI (Fully-Depleted Silicon On Insulator) is acknowledged as a promising technology to meet the requirements of emerging mobile, Internet Of Things (IOT), and RF applications for scaled technological nodes [1]. Leti is a pioneer in FDSOI technology, enabling innovative solutions to support industrial partners.

Scaling of FDSOI technology beyond 10nm node offers solid perspectives in terms of SoC and RF technologies improvement. Though from a technological point of view, it becomes challenging because of thin channel thickness scaling limitation around 5nm to maintain both good mobility and variability. Thus, introduction of innovative technological boosters such as strain modules, alternative gate process, parasitics optimization, according to design rules and applications, become mandatory [2].

The viability of these new concepts should be validated first by TCAD simulations and then implemented on our 300mm FDSOI platform.

This subject is in line with the recent LETI strategy announcement and investments to develop new technological prototypes for innovative technology beyond 28nm [3].

The candidate will be in charge to perform TCAD simulations, to define experiment and to manage them until the electrical characterization. The TCAD simulations will be performed in close collaboration with the TCAD team. The integration will be done in the LETI clean room in collaboration with the process and integration team. Candidate with out-of-the-BOX thinking, autonomy, and ability to work in team is mandatory.

[1] 22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications, R. Carter et al, IEEE IEDM 2016.

[2] UTBB FDSOI scaling enablers for the 10nm node, L. Grenouillet et al, IEEE S3S 2013.


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