Advanced photoemission of buried critical interfaces in micro-electronics of power and memory devices
Published : 10 January 2019
Nano-devices down-scaling requires a more and more severe control of buried interfaces of nano-layers underneath a top electrode. To this end, there is a pressing need for developing innovative physical characterization methods having a strong non-invasive character and a high degree of precision for direct transfer to in-line metrology. The context here is the consolidation and generalization of a generic method based on X-ray Photoelectron Spectroscopy and hard X-ray Photoelectron Spectroscopy and using inelastic losses to provide elemental depth distribution at the nanoscale (Tougaard’s method), and its complementarity with well-established ARXPS method. The local character of the analysis is provided either by an X-Ray micro-source, or by an XPS microscope. The objectives will be, on the one hand, to clarify the limits of the approach within the multi-material applicative framework of power, memory and photonic device; on the other hand the challenge is to consolidate the existing background modelling techniques in order to reach high degrees of precision by generalizing the most recent approaches (customized inelastic cross-sections, reference samples, several layer models, extensive use of hard X-ray probes.