Cryogenic Electronics for Quantum Engineering

Published : 24 April 2017

Quantum engineering is a rapidly evolving novel domain in device technology, boosted by the recent progress in semiconductor quantum bits (QuBits) and by the major opportunity to combine the quantum device with dedicated electronics of conventional CMOS technology working at low temperatures (= 4 K). The ultimate goal of the research related to the proposed thesis will be the development of silicon-based systems containing many QuBits and versatile electronics based on mature industrial technology, in order to facilitate the massive introduction of quantum processors. Nowadays state-of-the-art experiments on low-temperature quantum devices use electronic components at room temperature, but the future development of integrating many QuBits together complicates the device control with the multiplication of data lines. Minimal power dissipation and noise characteristics will be the challenging key elements to control a large number of QuBits. At CEA Grenoble, we have developed the first semiconductor QuBit fully realized on a CMOS 300-mm foundry that uses the spins of holes in Si as quantum state. The subject of the thesis is aimed to build the electronics needed nearby the QuBit at low temperatures, using CMOS technology compatible with Si Qubits. The PhD student will be asked to develop his competence in the quantum physics of QuBits, the modelling of transistor parameters at low temperatures, and the design and measurement of analogue electronics, with the main task in developing and testing CMOS circuitry at low temperatures.

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