Design and assessment of FD-SOI devices specially functionalized for uncooled IR imaging
Published : 8 February 2020
Uncooled infrared focal plane array (U-IRFPA) microbolometer technology has opened the field of thermal imaging to various novel applications, such as automotive driving assistance, building automation, leisure, smartphone. These new applications are expected to grow rapidly to reach a large volume market.
Firstly developed at CEA-LETI, microbolometer technology was then transferred to LYNRED (LYNRED by SOFRADIR & ULIS, www.lynred.com) in charge of its industrialization. However, the freshly expressed new commercial needs require an improvement of the technology based on some breakthrough developments, in particular to reduce the pixel pitch to 5µm, i.e. the ultimate size sets by the IR radiation diffraction.
It is the framework of this doctoral study, which aims at developing a novel class of microbolometers, by the mean of a thermal micro-transducer based on a MOS technology on FD-SOI silicon thin film, whose performance is expected as a breakthrough with respect to thermistor-based current technology.
Research work will cover both the architectural design of a new integrated IR sensor on silicon, its technological prototyping (on the Leti’s 200mm silicon platform) and the finale evaluation of its performance. Basically, it means both design and achievement of a disruptive sensor which differs from a classical unitary MOS-FET transistor as it could features for example an active sensor made of several different devices, or even a smart sensor adjusting itself its sensor properties in standalone.
At the end of the 3 years, the student will have led to an in-depth evaluation of the feasibility of this technology for uncooled IR imaging.