Modeling of silicon two qubit gates

Published : 27 February 2019

“Quantum computers” may soon be able to solve problems beyond the reach of conventional computers. Such computers no longer manipulate electrons as particles, but as waves that maintain phase relationships and can interfere. The preparation, coherent manipulation and “reading” of quantum states is extremely challenging. One promising option for making “quantum bits” (qubits) is to divert silicon MOS transistors in order to store a few electrons and manipulate their spin. The CEA Grenoble fabricates and characterizes such devices, and develops appropriate tools for their modeling. The objective of this PhD is to study the dynamics of two (or more) qubit gates by solving the time-dependent Schrödinger equation in the presence of electronic interactions in a realistic geometry (1D and 2D arrays of qubits). Our purposes are to understand the physics of the interactions between qubits, to identify the mechanisms limiting the fidelity of the elementary quantum operations (noise, phonons, …), and to propose innovative solutions for the design of the devices as well as for the manipulation protocols. This study will be carried out in close collaboration with the experimental physics teams working on this topic at CEA and CNRS, in the frame of the European ERC Synergy project quCUBE and of the French ANR project MAQSi.

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