Resistance level modulation in PCM memory for neuromorphic applications
Published : 8 February 2020
Since the last 50 years, the processors are based on the von Neumann architecture and the progress in the integration on a very large scale made it possible to realize this computational architecture on a suitable technological substrate. However, today the miniaturization of electronic components is no longer sufficient to increase performance and reduce the power consumption of conventional architectures. In addition new applications, first of all the artificial intelligence, requires completely new paradighms and calculation approaches. New computational architectures inspired by biology have recently been proposed to overcome these difficulties. The main difference between a neuromorphic circuit and a classical architecture is the memory organization: networks of biological neurons are characterized by co-localization of memory (synapses) and computing centers (neurons). PCM memories are see as strong candidates for emulation of synaptic behavior but the ability to modulate their resistance level is still a challenge. This is a key point to enable PCM cell as synaptic component.
This work proposal will start with a characterization phase where the ability of PCM to be modulated in different resistance levels will be scrutinized. The collected data will feed a PCM multilevel model, which is essencial to enable new circuit architecture. In a final stage, innovative circuit can be proposed, based on PCM technology, as proof of concept for neurorphic applications.