Thermal optimization of Phase Change memoires: study of innovative PCM and dielectric materials for their integration in advanced PCM cells
Published : 8 February 2020
Phase Change memories are now recognized as a ‘mature non volatile memory technology’. They are now proposed by ST Micro for their microcontrolleurs for automotive applications. The chalcogenide (GeSbTe) material used was chosen for its high thermal stability compatible with automotive application but it is slow to crystallize hence leads to high power consumption while programming devices. Thermal optimization of the PCM cell is THE way to enable the reduction of programming currents. The goal of this thesis is to characterize the thermal properties of the chalcogenide and dielectric materials used in the integration of PCM cells and to proposer innovative solutions towards thermal optimization. The thesis will be in collaboration the I2M institute of Bordeaux University which is well recognized for the development of radiometric techniques for thermal conductivity characterization on film films: modulated photothermal radiometry (MPTR); periodic pulse radiometry (PPTR); modulated scanning thermal microscopy (SThM).