Actualités :

Context : Parasitic resistances and capacitances in integrated circuit produce circuit performance degradations (i.e speed and power consumption) when CMOS technologies are scaling down. They also need to be accounted accurately while designing Non Volatile Memory (NVM) advanced circuit for neuromorphic applications or high power circuit with GaN technology to anticipate heating effect. Parasitic elements […] >>

Context : 3D sequential integration enables to achieve the highest 3D contact density between stacked levels compared to other existing techniques. However it requires to process stacked devices with a limited thermal budget. Leti institute is pioneer in this domain and has a unique expertise on low temperature devices for computing applications. This internship’s goal […] >>

Context And background : LCFC Lab offers a complete RGA testing solution for outgassing and hermetic studies of microelectronic and MEMS package cavities. Two ultra high vacuum apparatus has been developed as well as a devoted software package for qualitative and quantitative RGA data analysis. To strengthen the RGA activity, software optimization and improvement is […] >>

Context: This internship, performed in the framework of an ambitious European project, aims to provide for the first time a powerful and viable technological solution consisting in processing the information inside or close to the memory circuit block (also known as « In-Memory Computing »). Thanks to this new solution, a new class of nano-technology mixing a […] >>

Cadre et contexte Les composants de puissance GaN sur Si sont aujourd’hui vu comme la prochaine génération de composants « mass market » pour la conversion d’énergie électrique. Dans ce cadre, le LETI développe sa propre filière GaN sur Si (compatible CMOS) allant du substrat au module final.  Ces dispositifs doivent opérer des commutations entre un état […] >>