Actualités :
08 octobre 2019
3D sequential integration for high density sensing applications.
Context : 3D sequential integration enables to achieve the highest 3D contact density between stacked levels compared to other existing techniques. However it requires to process stacked devices with a limited thermal budget. Leti institute is pioneer in this domain and has a unique expertise on low temperature devices for computing applications. This internships goal […] >>
08 octobre 2019
Optimization of Residual Gas Analysis mass spectrum through machine learning
Context And background : LCFC Lab offers a complete RGA testing solution for outgassing and hermetic studies of microelectronic and MEMS package cavities. Two ultra high vacuum apparatus has been developed as well as a devoted software package for qualitative and quantitative RGA data analysis. To strengthen the RGA activity, software optimization and improvement is […] >>
08 octobre 2019
Innovative 3D Technology of a nonvolatile memory cell for In-Memory-Computing
Context: This internship, performed in the framework of an ambitious European project, aims to provide for the first time a powerful and viable technological solution consisting in processing the information inside or close to the memory circuit block (also known as « In-Memory Computing »). Thanks to this new solution, a new class of nano-technology mixing a […] >>
08 octobre 2019
Développement de mesures dynamiques pour composants GaN sur silicium
Cadre et contexte Les composants de puissance GaN sur Si sont aujourdhui vu comme la prochaine génération de composants « mass market » pour la conversion dénergie électrique. Dans ce cadre, le LETI développe sa propre filière GaN sur Si (compatible CMOS) allant du substrat au module final. Ces dispositifs doivent opérer des commutations entre un état […] >>
08 octobre 2019
Characterization and reliability of RF switches, study of the substrate impact on performance.
Context: Incoming 5G imposes new challenges on RF devices performance such as operating at millimeter-wave frequencies and harsh constraints on linearity to avoid spectral pollution in the adjacent carriers. The best way to efficiently reduce the level of harmonics is to boost the resistivity of the semiconductor beneath the buried oxide. In SOI (Silicon on […] >>


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