News : Industry

December 08 2015

Interview: Nanowirebased flexible LEDs a first step toward flexible displays

  • Industry
  • Innovation & Society
  • Interviews
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  • Research
Interview: Christophe Durand, Research Scientist, INAC « Nanowirebased flexible LEDs a first step toward flexible displays»   INAC and three other institutes* have developed the world’s First two-color, nanowire-based Flexible LEDs.   What does this advance mean? Flexible LEDs are a prerequisite to flexible, bendable displays. They are currently being made from organic compounds at […] >>

December 08 2015

Enerbee invests 4 million in its new production plant

  • Industry
  • MINATEC
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  • Research
Startup Enerbee, which has its offi ces at MINATEC, is investing €4 million to scale up its fi rst miniature electric generators for industrial manufacturing. The generators are used to harvest energy from objects in motion, i.e. connected consumer electronics. Enerbee plans to brings its manufactured products to market by the end of 2016. Enerbee’s […] >>

December 08 2015

ClouT project successfully rolls out sensiNact middleware in four smart cities

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  • Innovation & Society
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  • Research
In 2015, the CEA successfully implemented sensiNact middleware in four test cities. The middleware brings together data from a host of urban sensors to send information regarding traffi c, weather, pollution, and noise to a single user interface. The interface then powers a variety of apps, from information to risk prevention. The middleware was developed […] >>

December 08 2015

DC-to-DC converters now found on silicon

  • Industry
  • MINATEC
  • News
  • Research
The DC-to-DC converters that power electronic circuits can take up nearly a third of a circuit board’s surface area and account for up to half of a circuit’s power consumption. One way to solve the problem is to integrate the converters closer to the circuits they power—in other words, right on the silicon! This ingenious […] >>

December 08 2015

Transistors: GaN enters the spotlight

  • Industry
  • News
  • Research
Gallium nitride (GaN) is fi nally giving silicon a run for its money for use in power transistors capable of switching hundreds of volts. What has changed? Until now, GaN fabrication processes were simply cost prohibitive. Researchers at Leti are on the verge of overcoming cost concerns with their recent 650 V “normally-on” transistor, fabricated […] >>
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