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Offers : 19

(filled) Realization and optimization of biosensors based on SiC nanolines for DNA electrical detection

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Start date : 1 October 2018

offer n° IMEPLaHC-06112018-CMNE

PhD proposal 2018
Realization and optimization of biosensors based on SiC nanolines for DNA electrical detection

Scientific context :
The fast and direct detection of small quantities of biomolecules improves early medical diagnosis of certain serious diseases as cancers and can be used to detect in situ the presence of pathogenic viruses or GMOs for food industry, environmental protection and bio-defense. Currently, many research projects are conducted on nanoelectronic devices based on Si nanowires [1] that can perform such detection with very high sensitivity.
Indeed, SiC is already used for many biomedical applications covering prostheses and stents, biomimetic structures and cellular reconstruction. Very recently, it has emerged as the best candidate biocompatible semiconductor [2], which provides new integration prospects of in vivo sensors.

Objective of the research program :
Our research project aims to develop NWFETs (Nanowire Field Effect Transistors) based on SiC nanostructures for various applications: nanoelectronics in critical environments (temperature, gases, radiation) or nanosensor for temperature, gas or biological elements. This project fits in perfectly with one of the research department “Physics, Engineering and Materials” from University Grenoble Alpes (UGA), and in significant ongoing thematic programs at local, national and international level as Labex MINOS (Laboratory of Minatec Center on the Miniaturization of Innovative Nanoelectronics Devices), the IRT Nanoelectronics and Sinano Institute.
We have validated the concept of SiC nanowire transistors in previous phD thesis leading to a first demonstrator internationally [3, 4, 5]. Grafting and electrical detection of DNA through NWFET based on 2 types of innovative SiC nanostructures have been demonstrated [6, 7, 8, 9, 10]. In continuation of this work, this new phD thesis aims to develop biosensors based on eached nanolines and to optimize the properties and performances of this device in terms of sensitivity, detection limit, reversibility, stability, selectivity and acquisition time.

Workplan :
In this PhD project, the student will support the development of SiC nanolines, the realization of NWFET transistors, their functionalization towards the electrical detection of DNA. The work will be done within 2 Grenoble laboratory partners in this project: IMEP (Grenoble site of IMEP-LAHC) and LMGP.
The 4 main steps of the program are:

  1. Development of SiC nanolines by two methods:
    – By ICP (Inductively Coupled Plasma) etching of nanolines into a SiC epitaxial layer of high quality and controlled doping (IMEP) [4].
    – By ICP etching of nanolines into a Si film on SOI (Silicon On Insulator) following by a carburation of these Si nanolines in a dedicated reactor to the epitaxial growth CVD (Chemical Vapor Deposition) to obtain Si core / SiC shell nanolines (collaboration avec Univ. Parme et Univ South Florida).
    Techniques such as atomic force microscopy AFM, transmission microscopy TEM, Raman spectroscopy and photoelectron spectroscopy XPS will be used for physical characterization and optimization of the resulting nanostructures (LMGP).
  2.  Technological achievement of NWFET:
    Backgated nanodevices, based on these SiC nanostructures, will be carried out with the upstream facilities of the Advanced Technology Platform (PTA) in Minatec using deposition and etching techniques, and also advanced ebeam lithography and lift-off techniques for achieving optimized microcontacts (IMEP).
  3.  Functionalization and hybridization:
    The covalent grafting of DNA probes on the two types of nanostructures will be realized in a localized manner by combining, on the one hand, an appropriated chemical functionalization process [7], and on the other hand, the electron beam lithography (LMGP) [8]. Electrical characterization of biosensors will be conducted on both technological variants and between each functionalization steps (IMEP).
  4.  Electrical detection of DNA: evaluation and performance optimization
    After the electrical detection of hybridization molecules, experiments will focus on assessing and optimizing performance: study of the sensitivity, detection limit, selectivity, stability and reversibility.
    Techniques such as current measurement (static and temporal), impedance, electrical noise, will be used on both variants of NWFETs (IMEP). Furthermore, the real-time acquisition will be studied and developed by the establishment of microfluidic systems (LMGP).


[1] N. Gao, W. Zhou, X. Jiang, G. Hong, T-M Fu, C.M. Lieber, “General Strategy for Biodetection in High Ionic Strength Solutions Using Transistor-Based Nanoelectronic Sensors”, Nano Letters. 15, p2143−2148 (2015)
[2] S.E.Saddow, Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications. Elsevier Sciences (2011)
[3] K. Rogdakis, thèse de l’Université de Grenoble (2010)
[4] J.H. Choi, thèse de l’Université de Grenoble (2013)
[5] M. Ollivier, thèse de l’Université de Grenoble (2013)
[6] L. Fradetal, thèse de l’Université de Grenoble (2014)
[7] L. Fradetal, V. Stambouli,, E. Bano, B. Pelissier, J.H. Choi, M. Ollivier, L. Latu-Romain, T. Boudou, I. Pignot-Paintrand, “Bio-Functionalization of Silicon Carbide Nanostructures for SiC Nanowire-Based Sensors Realization”; Journal of Nanoscience and Nanotechnology 14, 5, p3391–3397 (2014)
[8] J.H.Choi, L.Latu-Romain, E.Bano, F.Dhalluin, T.Chevolleau, T.Baron, ”Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching”, Journal of Physics D: Appl. Phys. 45 p235204 (2012)
[9] M. Ollivier, L. Latu-Romain, M. Martin, S. David, A. Mantoux, E. Bano, V. Soulière , G. Ferro, T. Baron, “Si–SiC core–shell nanowires”, J. Crystal Growth 363 p158-163 (2013)
[10] L. Fradetal, E. Bano, G. Attolini, F. Rossi, and V. Stambouli, “A Silicon Carbide nanowire field effect transistor for DNA detection”, Nanotechnology 27 (23) p235501 (2016)

Financial support :
The doctoral contract will be financed by University Grenoble Alpes in the framework of the Doctoral School EEATS.

The candidate is Master of Sciences graduated in the field of Micro-Nanotechnology. An experience in cleanroom processing and device characterization would be a plus.
CV, marks of master (year1 and 2) and letter should be sent to supervisor and co –supervisor by June 10, 2018 for an application on June 12, 2018 :
Edwige BANO , IMEP- LAHC ,
If its application is approved, the candidate will have to registered in the Doctoral School EEATS :



  • Keywords : Engineering science, Engineering science, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc, LMGP
  • Laboratory : FMNT / IMEP-LaHc / LMGP
  • CEA code : IMEPLaHC-06112018-CMNE
  • Contact :
  • This Thesis position has been filled. Thank you for your interest

(filled) Development of Innovative and Transparent Radio-Frequency devices based on Nanocelluloses – Silver Nanowires hybrid system

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Start date : 1 October 2018

offer n° IMEPLaHC-06072018-RFM

Project : E-Transparent

Development of Innovative and Transparent Radio-Frequency devices based on Nanocelluloses – Silver Nanowires hybrid system

  •   PhD Start : 01/10/2018
  • Univ. Grenoble Alpes – IDEX Allocation
  •   Application deadline : 30/06/2018

    Project Description
    Electromagnetic waves are present everywhere and are used in many devices for industrial as well as in everyday life applications. Defense and Security, Building and Smart environments, Health, Telecommunications, packaging & logistic constitute huge markets. Applications concerning health monitoring, mobile phone, Wi-Fi, RFID Identification/Authentication, NFC contactless payment, show continuing technological and economical growths.
    Nevertheless, several new and large markets cannot be addressed due to the drawbacks of the key component: the antenna, which is usually fabricated by printing (or etching) metal patterns on rigid or conformable substrates. The standard material used as metallic electrode is non transparent silver spherical particles. Thus, cost and low optical transparency are clearly the limiting factors to integrate antennas or RF patterns onto transparent surfaces such as windows, touchscreens or windscreens, transparent packaging, etc. Flexible, transparent and low cost antennal devices will create these new fields of applications.
    The main goal of this PhD thesis is to produce innovative transparent RF patterns with scalable techniques, in a standard environment, to address electromagnetic (EM) applications such as RF antennas, shielding, filters with a focus in smart packaging and building field.
    Based on the complementary expertise of participants (nanocellulose, ink formulation, radio-frequence), the objective of E-Transparent project will focus on the development of transparent and conductive hybrid system based on nanocelluloses (NFC/NCC) combined with a conductive material (silver nanowires, carbon nanotubes, conductive polymer) to address RF applications.Leaving aside the initial bibliographic study, the following survey and the final redaction of the thesis manuscript, PhD Student will work into 3 tasks, as detailed below:
  • Task 1    Conductive and transparent nanocellulose suspension design
    Target    Reach the performances specified by the targeted RF application (antenna, shielding, etc)
    1.1: Identification of the most suitable raw materials (Nanocelluloses, Conductive materials, additives) and nanocellulose functionalization
    1.2:  Formulation and optimization towards RF application requirements
    1.3:  Hybrid system characterization and colloidal stability parameters
  • Task 2    Processability and patterning of nanocellulose suspensions:
    Target    Production of thin patterning layers
    Subtask :
    2.1: Patterning layer obtained by an additive deposition processes (spray, printing, ect.)
    2.2:  Patterning layer obtained by a substractive process
    2.3:  Patterns characterization (thickness, pattern resolution, printing default, electronic performances, etc.)
  • Task 3    RF system production and demonstrator development
    Target    Characterize the transparent RF system produced
    Subtask :
    3.1: RF pattern design and Characterization of RF properties – Identification of achievable specifications
    3.2: Understanding of the output properties/formulation/processing/pattern cross correlation
    3.3: Demonstrator preparationDue to the multidisciplinary domains of the skills involved, the PhD thesis will be performed between two laboratories located in Grenoble: LGP2  and IMEP-LAHC
    IMEP-LAHC: profile:
  • Holding a Master or Engineer degree in material science
  •   Given the multidisciplinary nature of the project, different skills can be promoted :
    –   Expertise in Cellulose-based materials
    –  Expertise in process engineering (printing processes, coating, etc…)
    –  Expertise in complex fluid formulation and characterization (Rheology)
    –  Expertise in Radiofrequency
  •   Good english level
  •    Autonomy, professionalism, capacity to analyze and synthesize, motivation, ability to work in a teamTo apply for this PhD offer, please send a detailed CV, a letter stating the reasons of your application and the contact information of a referring person if possible.

    Contact Information :
    Dr. Aurore DENNEULIN (LGP2),Tel : +33 476 826 928 ,aurore.denneulin@pagora.grenoble-inp.frPr.
    Tan Phu Vuong, (IMEP-LaHC),
    Dr Julien BRAS  (LGP2), Tel : +33 476 826 915
  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc
  • Laboratory : FMNT / IMEP-LaHc
  • CEA code : IMEPLaHC-06072018-RFM
  • Contact :
  • This Thesis position has been filled. Thank you for your interest

(filled) Theory, design methodology and experimental validation of distributed amplifiers in advanced silicon technologies

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Start date : 1 September 2018

offer n° IMEPLaHC-05172018-RFM

                                                     PhD POSITION                                                                                                                                                                                                         Theory, design methodology and experimental validation
of distributed amplifiers in advanced silicon technologies

Laboratory: Research will be done at the RFIC-Lab (under creation)

Supervisor: Antonio Souza, Florence Podevin & Sylvain Bourdel

Phone: +33 4 56 52 95 67


Distributed amplifiers are of main concern in systems requiring very high gain-bandwidth products. At millimeter-wave frequencies, parasitic elements of lumped components become hard to model and control, while standard transmission lines are bulky and offer a limited flexibility in terms of characteristic impedances above 50 Ohm. To circumvent those restrictions, the PhD student will evaluate the use of a new kind of high impedance transmission line in distributed amplifiers, aiming to improve the amplifier´s gain-bandwidth product, matching and design flexibility. Taking into account aspects such as DC power, stability, Noise Figure and fabrication dispersion, the PhD student will propose an experimentally validated design methodology underlining the main tradeoffs that can be encountered in CMOS or BiCMOS technologies.

Context for millimeter-wave distributed amplifiers:
Mobile data transfer has exploded with the deployment of 4G and with the new needs created by this technology. According to Cisco´s Global Mobile Data Traffic Forecast Update 2016-2021, the annual Global IP traffic reached 1.2.1021 bytes in 2016, and will reach 3.3.1021 bytes in 2021. To address this demand, millimeter-wave systems (30-300 GHz) are required and so highly performing circuits at such frequencies. Especially, 5G working groups plan to aggregate a large number of physical channels to highly increase the effective data rate of mobile devices. When dealing with very high frequencies, distributed approach for active circuits is a well suited solution. Distributed systems allow the combination of a large number of channels, thus increasing the available bandwidth and hence the bit rate. This research area becomes a strategic field for the achievement of ultra-wideband communication systems. Traditionally, distributed circuits were dedicated to high cost wireline applications and designed using expensive technologies. The high performance of recent commercial CMOS/BiCMOS technologies now allows designing distributed circuits at low cost and could be a solution for the next generation of communication systems. In addition, specific techniques have been developed to reduce the size and increase the performance of passive circuits. Such techniques are very promising and surface efficient in modern CMOS/BiCMOS technologies. Moreover they also enable easy tuning capabilities of the passive circuits which are useful in the design of distributed circuits.

The research work consists in exploring the architecture of a transmission-line based distributed amplifier to be integrated into a standard CMOS/BiCMOS technology. A simplified illustration of a distributed amplifier is shown below. It is based on 2 propagation lines coupled by the transconductances of the transistors. The signal is amplified at each section of the input line and combined in the output line. Such structure can reach more than 100 GHz bandwidth in standard CMOS technologies.

Description of the Research Work:
The design of wideband distributed circuits requires the development of skills in the fields of passive circuits design (transmission lines, matching, electric and magnetic fields mapping, …) and also in active circuits design (PAs, oscillators, LNAs, …). This study will be based on the expertise developed in the laboratory in the field of active millimeter-wave circuits and innovative devices using slow-wave techniques. In this study, the input and output line of the amplifier will be designed considering different kinds of transmission lines.

A preliminary study has already been carried out and a first architecture has been recently proposed with an original design methodology, to be fabricated in July 2018. This approach is quite new and appears to be very promising in this research field that suffers from a lack of design/optimization methodologies. Quite unusual, the student will have the opportunity to characterize this circuit at the early beginning of his PhD thesis, what will strongly guide and help him in designing further circuits. Based on this preliminary study, the student will have to make a state of the art on the following topics: low-loss transmission lines, high frequency gain boosting methods for active cells, stability enhancement techniques, architectures and layout-oriented design for (distributed amplifier) compact circuits. The PhD student will then develop new types of distributed amplifier based on specific transmission lines (slow waves eventually), or by fully distributing the transconductances all along the transmission lines. The performance comparison will help to demonstrate the proposed ideas. During the PhD, the student will develop skills on:

–  passive circuits by using the tools and expertise available in the laboratory to design passives;
–  on active circuits linear and non-linear analysis; instrumentation and measurement, by using the laboratory infrastructure to characterize the circuits developed.

The work will be based on recent CMOS/BiCMOS technologies, such as the 55-nm BiCMOS technology of ST-Microelectronics, which is a quite innovative technology dedicated to millimeter waves applications.

Skills: Cadence, ADS, HFSS, Scilab or Matlab, Active and Passive RF circuits
This work will be performed in partnership with the Federal University of Paraiba (UFPB), Brazil, and some travels may be envisaged between University Grenoble-Alpes and UFPB.
Please send a CV and motivation letter (preferred before 5th of June) to:



  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc
  • Laboratory : FMNT / IMEP-LaHc
  • CEA code : IMEPLaHC-05172018-RFM
  • Contact :
  • This Thesis position has been filled. Thank you for your interest

(filled) Pseudo-MOSFET sensors based on out-of-equilibrium potential reading

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Start date : 1 October 2018

offer n° IMEPLaHC-05152018-CMNE

Pseudo-MOSFET sensors based on out-of-equilibrium potential reading
Deadline for application: the 1st of June 2018, beginning of contract: the 1st of Oct. 2018

IMEP – LAHC, MINATEC – INPG, 3, Parvis Louis Néel, 38016, Grenoble

Irina Ionica (Associate Professor Grenoble ING),  +33 (0) 4 56 52 95 23

Context and objectives:
In the context of microelectronics, the importance of semiconductor on insulator (SOI) substrates has been extensively proven, not only to produces high performance circuits, but also for embedded systems-on-chip solutions, including sensors. The classical electrical characterization method of SOI substrates uses the pseudo-MOSFET configuration, in which the current flow between two probes placed on the top silicon film is controlled by the voltage applied on the bulk substrate, which serves as a backgate.
Similar to an ISFET, the threshold voltage of the pseudo-MOSFET shifts in presence of top surface charges1. Furthermore, we recently proved that the out-of-equilibrium potential in the top silicon film is an original way to detect the presence of such surface charges2. This new reading paradigm needs to be benchmarked with respect to the classical conductance variations in ISFETs and optimized to maximize performance in terms of linearity, sensitivity, noise and consumption; this is the aim of this multidisciplinary thesis.

Research to be performed:
In order to reach a pragmatic sensor, starting from our previous proof-of-concept studies some additional steps are needed:
· replacing the probes by deposited metal or doped contacts,
· validating that the physical mechanisms responsible for the out-of-equilibrium potential with deposited contacts are similar with those measured with probes,
· finding the appropriate dynamic conditions of potential reading,
· benchmarking of potential-based vs. current-based reading in the devices,
· exploiting the sensor for realistic bio-chemical detection (liquid environment, reading electronic system …).
The PhD student will develop the complete chain, from device fabrication, electrical measurements in equilibrium and out-of-equilibrium conditions, surface functionalization for specific detection applications (collaboration with Néel Institute)… The experimental characterization part will be
completed by segments of modeling and simulation, allowing the comprehension of physical phenomena involved and the optimization for the sensor.

Knowledge and skills required:
This PhD topic belongs mainly to the field of micro-nano-electronics, and more precisely to the electrical characterization and modeling of SOI substrates. The candidate must have a solid knowledge of physics of semiconductors and devices. Electronics of the measurement systems, surface functionalization would be appreciated. The candidate is expected to enjoy experimental work and the development of adapted measurement protocols. Scientific curiosity, motivation, creativity are mandatory qualities in order to take full advantage of the scientific environment of this thesis and to gain excellent expertise for his/her future career. The topic is in the field of applied physics, but close to the fundamental physics, as well as to the industrial world.
After the PhD, the candidate will easily adapt to both academic and industrial research environments.
The candidate must have a very good academic record, with high grades.
1 I. Ionica, Proceedings of IEEE Nano(Portland, USA) 2011, pp 38-43
2 L. Benea, Solid-State Electronics, vol. 143, pp. 69-76, 2018

  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc
  • Laboratory : FMNT / IMEP-LaHc
  • CEA code : IMEPLaHC-05152018-CMNE
  • Contact :
  • This Thesis position has been filled. Thank you for your interest

Structure–property relations for manganite memristive devices

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Start date : 3 September 2018

offer n° LMGP2018_13

Among the various emerging devices expected to replace conventional Flash memories, Resistive Random Access Memories (ReRAM) are currently attracting a strong scientific and industrial interest. Their operations are based on the switching between a low resistive and a high resistive state, which represents the two binary states. ReRAM devices have already demonstrated significant advantages over other technological options, such as high scalability, fast switching speed combined with low switching energy, low power consumption, strong endurance and data retention larger than ten years. Different types of ReRAM have been demonstrated so far: some of them exploit the breakdown properties of metal-oxides, while others use the formation of a conductive bridge (CBRAM). In the case of valence change memories (VCM) it is believed that the change in resistance is induced by the application of a voltage (or current), which results in a local valence change in the oxide material. This valence change is presently thought to be controlled by the migration of oxygen vacancies either in the form of filaments or on the contrary, homogeneously distributed near the entire electrode area (homogeneous interface-type switching).
Manganite heterostructures show very promising resistive switching characteristics and multilevel resistance states. This makes them ideal candidates for alternative non-volatile memories, but also as building blocks for neuromorphic computation. In contrast to the more common filamentary switching, manganite devices have been shown to switch homogeneously over the whole device area and might therefore be superior with respect to their cell-to-cell and cycle-to-cycle variation. Moreover, electronic and ionic transport in these materials can be tuned by varying the composition and microstructure, which could directly affect the switching performance. Although it is clear that ion transport plays a key role in the switching mechanism, many open questions are still to be understood. In particular, grain boundaries (GBs), present in CMOS-compatible polycrystalline manganite devices, significantly influence ionic transport in these materials, but their impact on resistive switching has not been directly studied yet.
This PhD research project will be devoted to the study of resistive switching (RS) in Sr-doped lanthanum manganites with the aim of presenting a comprehensive and consistent picture of the transport properties of dislocations (GBs) in manganites. This will be carried out by combining various experimental techniques to probe the oxygen and charge transport along and across the dislocations.
Epitaxial thin film model systems with different chemical compositions and well-defined grain boundaries will be fabricated by Metal Organic Chemical Vapour Deposition (MOCVD) through the use of bicrystal substrates. The impact of the grain boundaries on the ion transport and the switching properties of the films will be comprehensively studied. The chemical composition and the structure of films and devices will be investigated by the large variety of techniques surface analysis and bulk sensitive techniques available in the LMGP laboratory or at different European synchrotron facilities (e.g. SOLEIL and BESSY). Performing operando spectroscopy of switching devices will enable us to gain insights into the chemical and structural changes taking place during device operation. Oxygen diffusion and surface exchange in different thin-film configurations will be investigated by 18O tracer diffusion experiments in combination with Raman spectroscopy. This will enable us to uncover the complex interplay between microstructure, chemical composition, ionic and electronic transport and the switching performance of manganite memristive devices. Based on this, we will develop new routes for the fabrication of CMOS-compatible manganite micro-devices with high reliability and improved switching kinetics.
Scientific Environment
The candidate will work within the LMGP, Materials and Physical Engineering Laboratory, in the NanoMat team. Located in the heart of an exceptional scientific environment, the LMGP offers the applicant a rewarding place to work.
LMGP Web Site:
The PhD thesis work will be carried out in the framework of on the “Mangaswitch” ANR research project, and will involve collaboration and interaction with 2 partners in Germany: Prof. Dr. Roger A. De Souza’s group at RWTH Aachen and Prof. Regina Dittmann’s group at FZ-Jülich. During the PhD the student will spend 3 months at the German collaborators’ laboratories.
Profile & requested skills
The candidate must be graduated from an engineering school and/or with a Master 2R degree whose training focuses primarily on materials science, physics, chemistry or related field.
We are looking for a highly-motivated student with a strong interest in experimental physics and materials science. Interpersonal skills, dynamism, rigor and teamwork abilities will be appreciated. Candidates should be fluent in English and/or in French. In addition, well-written English will be highly appreciated.
According to French regulations for a PhD
Please send by email by the 23th May 2018 your:
– Detailed Curriculum Vitae
– Cover letter explaining the motivation for the PhD work
– Transcript of marks obtained in Masters

  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, Materials and applications, LMGP
  • Laboratory : LMGP
  • CEA code : LMGP2018_13
  • Contact :