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Offers : 103

Piezoelectric Energy Harvesters for Self-Powered Automotive Sensors

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Start date : 1 October 2017

offer n° IMEPLaHC-06072017-CMNE

Marie SKLODOWSKA -Curie PHD Positions
ENHANCE-Initial Training Network- Competitive ESR salary

“Piezoelectric Energy Harvesters for Self-Powered Automotive Sensors” will provide thirteen PhD Early Stage Researchers (ESRs) with broad and intensive training on key topics such as development of energy harvesters compatible with MEMS technology able to power wireless sensors.
We are looking for candidates from Chemistry, Physics, Mechanics and Electronics fields to join one our partners.
Applied to automobiles this technology will take us one step closer to creating green vehicles.

Early Stage Researchers (ESR) :
ESR shall, at the time of recruitment by the host organisation, be in the first four years *( full-time equivalent research experience) of their research careers
– Duration of recruitment: 36 Months

ELIGIBILTY CRITERIA :
The researchers may be a national of a Member State, of an Associated Country or of any other third country.
– The researcher must not have resided or carried out his/her main activity (work, studies, etc) in the country of his/ her host organisation for more than 12 months in the 3 years immediately prior to his/her recruitment .
-Hold a Master’s Degree or equivalent which formally entitles to embark on a Doctorate.
– Do not already hold a PhD degree

HOST ORGANISATIONS:
Univ. Franche-Comte (FR), INSA Lyon (FR), Imperial College London (UK),
INSTM-Univ. of Catania (IT),
Grenoble INP (FR), University of Cologne (DE)
Cedrat Technologies (FR), Aixtron (DE),
ST Microelectronics (IT)

PARTNER ORGANISATIONS:
Peugeot PSA Group, Frecinisys, Epivalence,  Knowledge Transfer Network,
EPFL,  ST Microlectronics (FR)

HOW TO APPLY & More info on :
https://euraxess.ec.europa.eu/jobs/209340

  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc
  • Laboratory : FMNT / IMEP-LaHc
  • CEA code : IMEPLaHC-06072017-CMNE
  • Contact : montes@minatec.grenoble-inp.fr

(filled) Study of potential fluctuations in thin film solar cells

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Start date : 1 October 2017

offer n° IMEPLaHC-05242017-CMNE

                                                                             ED EEATS – THESIS TOPIC 2017 :
Study of potential fluctuations in thin film solar cells

Start date : October 2017
Offer n° IMEPLaHC-05242017-CMNE
PhD position 2017¬-2020
The application must be received before 2017, June 7th

PROJECT DESCRIPTION:
CuZnSnSSe (CZTS) kesterite compounds are promising candidates for third generation thin film solar cells. Such technology is environment-friendly as only composed of earth abundant and non-toxic elements. However, up to now, contrary to more mature CdTe and CIGS devices, the conversion power efficiency of CZTS solar cells does not allow an industrial development. One of the main performance limitations could come from potential fluctuations induced by a large concentration of intrinsic defects in the CZTS alloys.

The objective of this thesis is to quantitatively analyze the potential fluctuations in these compounds and to identify their effect on the device performance. Two experimental and complementary techniques will be used: optical spectroscopy and electrical measurements. The applicant will carry out photoluminescence excitation spectra and time resolved spectroscopy in order to precisely evidence the presence of band tails and localized states. Secondly, admittance spectroscopy will be used to investigate the response of deep traps in the materials. In both cases, the data interpretation will be associated with models taking into account the potential fluctuations. Finally the results will be confronted to the performance of the solar cells.

 DESIRED SKILLS
Solid knowledge in solid-state physics and semiconductor technology
The candidate must hold a master degree (equivalent to a master M2R in France) or an equivalent university degree eligible for the EEATS Doctoral School of Université Grenoble Alpes.

DETAILS
Thesis advisors: Frédérique Ducroquet (IMEP-¬LaHC) – Henri Mariette  (Institut Néel/INAC)
Funding: Doctoral Grant
Thesis starting date: October/November 2017
Thesis duration: 3 years
 Keywords : Photovoltaics, solar cells, electrical measurement, optical spectroscopy
•    Laboratories : IMEP-LaHC – Grenoble
•    Contact : ducroquet@minatec.inpg.fr

 

  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc
  • Laboratory : FMNT / IMEP-LaHc
  • CEA code : IMEPLaHC-05242017-CMNE
  • Contact : ducroque@minatec.grenoble-inp.fr
  • This Thesis position has been filled. Thank you for your interest

(filled) Sharp-Switching Z2-FET Device: Novel applications, Scaling, Reliability and Variability

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Start date : 1 September 2017

offer n° IMEPLaHC-05242017-CMNE

                                                                                                      PhD Thesis : Registration DEADLINE on June 13th, 2017

                                                  Sharp-Switching Z2-FET Device: Novel applications, Scaling, Reliability and Variability  

Thesis co-advisorsMaryline Bawedin, IMEP-LAHC,
Joris Lacord, CEA-LETI,
Jacques Cluzel, CEA-LETI
Sorin Cristoloveanu, CNRS, IMEP-LAHC

Contacts: Maryline Bawedin, IMEP-LAHC,
Joris Lacord, CEA-LETI,

External cooperations: Univs. of Glasgow, Fudan (China), San Diego, Brown (USA) and Granada, STMicroelectronics.

The Z2-FET has recently been conceived in Grenoble and fabricated with FD-SOI technology by CEA-LETI and STMicroelectronics. The device is a forward-biased PIN diode, where the current is blocked by energy barriers induced by the front and back gates. A virtual PNPN thyristor with electrostatic doping is emulated. A positive feedback mechanism triggers the current on, leading to an extremely sharp switch (< 1mV/decade) from low OFF to high ON current, even for operation at ~1 V.
Recent studies have been focused on applications related to capacitorless floating-body memory (1T-DRAM) and protection against electrostatic discharge (ESD). The unrivalled performance of Z2-FETs can also be utilized for other novel applications. The research program is three-fold.

1 – Innovative applications. The goal is to design simple logic circuits that take advantage of the vertical switch between OFF and ON states in order to increase the speed and reduce the power. A single-transistor SRAM will also be explored. Finally, the feasibility of Z2-FET-based sensors (chemical, photo, magnetic) will be investigated. The implementation of the device in nanowires will be envisaged.

2 – Device scaling and variability. The minimum length, compatible with state-of-the-art FD-SOI technology, will be determined. The impact of fluctuations in size, film thickness and carrier lifetime will be studied.

3 – Reliability. Despite the advantage of low-voltage operation, carrier injection into the gate dielectric can still cause aging effects. Systematic experiments and TCAD simulations will be performed. This segment of research will also include low-frequency noise measurements. The conclusions of reliability and variability studies will directly apply to the optimization of memories and ESD devices.

The aim of this PhD project is ambitious at the fundamental science level and application-oriented. The research will require strong interaction between various fields of expertise: physics of semiconductor devices, electrical characterization, TCAD simulations and physics-based modeling. Candidates with previous experience in these fields will be highly appreciated. Scientific talent and strong motivation are key criteria of selection. The expertise gained during the PhD will lead not only to numerous publications but also to a successful professional career.

Related publications from IMEP:

H.El DIRANI, K. LEE, M. S. PARIHAR, J. LACORD, S. MARTINIE, J.-C. BARBE, X. MESCOT, P. FONTENEAU, P. GALY, F. GAMIZ, Y. TAUR, S. CRISTOLOVEANU, M. BAWEDIN    
Ultra Low-Power 1T-DRAM in FDSOI Technology, 20th Conference on “Insulating Films on Semiconductors”, 2017, Germany.

J. WAN, C. LE ROYER, A. ZASLAVSKY, S. CRISTOLOVEANU
A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration.
IEEE Electron Device Letts., 33, n◦ 2, 179{181 (2012)

M. BAWEDIN, S. CRISTOLOVEANU, D. FLANDRE
A capacitor-less 1T-DRAM on SOI based on double gate operation.
IEEE Electron Device Letts., 29, n± 7, 795–798 (2008)

J. WAN, S. CRISTOLOVEANU, C. LE ROYER, A. ZASLAVSKY
A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection.
Solid-State Electronics, 76, 109{111 (2012)

J. WAN, A. ZASLAVSKY, C. LE ROYER, S. CRISTOLOVEANU
A systematic study of the sharp-switching Z2-FET device : from mechanism to modeling and
compact memory applications.
Solid-State Electronics, 90, 2{11 (2013)

H. EL DIRANI, Y. SOLARO, P. FONTENEAU, C.-A. LEGRAND, D. MARIN-CUDRAZ,
D. GOLANSKI, P. FERRARI, S. CRISTOLOVEANU
A band-modulation device in advanced FDSOI technology : sharp switching characteristics.
Solid-State Electronics, 125, 103{110 (2016)

  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc
  • Laboratory : FMNT / IMEP-LaHc
  • CEA code : IMEPLaHC-05242017-CMNE
  • Contact : maryline.bawedin@minatec.grenoble-inp.fr
  • This Thesis position has been filled. Thank you for your interest

Crystalline quality improvment of first building blocks of a UV LED

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Start date : 1 September 2017

offer n° SL-DRT-17-0839

Emission in UVC range is important for applications such as water disinfection. Mercury lamps are nowadays used but one of their drawbacks is the use of Hg and their size. AlGaN based UV light emitting diodes (LEDs) seems to be the best candidate for their replacement. However, UV LED performances for emission around 260 nm did some progress but stay low. Three points of the LED structure can be incriminated: 1) AlN or AlGaN buffer bad crystalline quality, 2) quantum well internal quantum efficiency, 3) p doped AlGaN. We can also add issues with light extraction.

During this PhD thesis, we propose to tackle points 1) and 2). The thesis should follow two parts. The first one will be about crystalline quality improvement of AlGaN buffer by using AlGaN pyramids (dislocation filtering). The second part will focus on AlGaN well microstructure modification in order to increase localization effects. For each significant improvement, a UV LED demonstrator may be realized.

  • Keywords : Engineering science, Optics - Laser optics - Applied optics, Solid state physics, surfaces and interfaces, DOPT, Leti
  • Laboratory : DOPT / Leti
  • CEA code : SL-DRT-17-0839
  • Contact : amelie.dussaigne@cea.fr

Realization of low leakage & low cost top transistor level in a 3D sequential integration

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Start date : 1 October 2017

offer n° SL-DRT-17-0908

An alternative approach to conventional planar integration for future nodes is 3D sequential integration also called 3D VLSI or CoolCube integration. Compared to TSV-based 3D ICs, it offers the possibility to stack devices with alignment precision at the nm range enabling 3D contacts at the device level. CoolCube integration is deeply studied in the Silicon division (DCOS) in LETI and a first demonstration on 300mm wafers have been realized, with a top transistor level integrating all the features compatible with high power & high performance logic applications (defect free Si monocrystal, high-k/metal gate stack, raised source & drain).

However, CoolCube is a versatile integration and other applications (e.g. automotive or neuromorphic applications) do not need such high performance features which are cost effective. Relaxed top transistor level on Poly-Si film is a solution for these low leakage applications but raises technological challenges as it must be done with a limited thermal budget in order to preserve the bottom transistor layer integrity.

  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, DCOS, Leti
  • Laboratory : DCOS / Leti
  • CEA code : SL-DRT-17-0908
  • Contact : laurent.brunet@cea.fr
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