All opportunities

Offers : 23

Electrodes Development for Perovskites based Spectrometric Imagers

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Start date : 1 December 2019

offer n° PsD-DRT-19-0113

The optronics department of CEA/LETI has a solid expertise in the development of new X-ray and gamma imaging modules including a semiconductor or scintillator detector combined with readout electronics in the fields of medical imaging or safety.

The post-doctoral research activities will be focused on the development of all the technological steps to move from perovskite crystal to the detection device. The aim will be to optimize the nature of the electrodes, interfaces and deposition process in order to block the dark current, effectively collect photo-generated charges and guarantee the electrical stability of the devices. The objective is to develop a small prototype of pixelated spectrometric imagers.

Expertise on perovskite materials or electrode deposition would be of interest. The results obtained will be fundamental for the understanding of the physics of perovskite single crystal interfaces and for the development of advanced perovskite-based radiation detectors.

  • Keywords : Engineering science, Materials and applications, Solid state physics, surfaces and interfaces, DOPT, Leti
  • Laboratory : DOPT / Leti
  • CEA code : PsD-DRT-19-0113
  • Contact : eric.grosdaillon@cea.fr

nanophotonics applied to ultrasensitive biomolecular detection

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Start date : 1 February 2020

offer n° PsD-DRT-19-0104

This project proposes to develop an array of highly sensitive and specific detectors, based on nanowire photodetectors to target single molecule detection (SMD) and biological analysis applications involving a protocol without amplification. Nanowire arrays have the potential to improve the detection limit of DNA strands functionalized with quantum dots markers, without the need for amplification. They are CMOS compatible and will allow ultra-compact integration.

Thanks to their fast response and the ability to create dense arrays over large areas, nanowire photodetector are therefore an interesting approach to detecting rare events (SMD). Nanowire geometry is an interesting approach to optimize the speed-response trade-off.

The first objective of this project will be to explore the physical mechanisms that determine the performance of semiconductor nanowire photodetectors at the level of a single nanowire and then on an array of nanowire photodetectors. The biofunctionalization of this array and its hybridization with labelled DNA strands will be explored.

  • Keywords : Engineering science, Biotechnology, biophotonics, Radiation-matter interactions, DTBS, Leti
  • Laboratory : DTBS / Leti
  • CEA code : PsD-DRT-19-0104
  • Contact : olivier.constantin@cea.fr

Modeling silicon-on-insulator quantum bit arrays

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Start date : 1 November 2019

offer n° PsD-DRF-19-0091

A post-doctoral position is open at the Interdisciplinary Research Institute of Grenoble (IRIG, formerly INAC) of the CEA Grenoble (France) on the theory and modeling of arrays of silicon-on-insulator quantum bits (SOI qubits). This position fits into an ERC Synergy project, quCube, aimed at developing two-dimensional arrays of such qubits. The selected candidate is expected to start between October and December 2019, for up to three years.

Many aspects of the physics of silicon qubits are still poorly understood, so that it is essential to support the experimental activity with state-of-the-art modeling. For that purpose, CEA is actively developing the “TB_Sim” code. TB_Sim relies on atomistic tight-binding and multi-bands k.p descriptions of the electronic structure of materials and includes, in particular, a time-dependent configuration interaction solver for the dynamics of interacting qubits.

The aims of this post-doctoral position are to improve our understanding of the physics of these devices and optimize their design, and, in particular,

– to model spin manipulation, readout, and coherence in one- and two-dimensional arrays of SOI qubits.

– to model exchange interactions in these arrays and assess the operation of multi-qubit gates.

The candidate will have the opportunity to interact with the experimental teams from CEA/IRIG, CEA/LETI and CNRS/Néel involved in quCube, and will have access to data on state-of-the-art devices.

  • Keywords : Theoretical physics, Solid state physics, surfaces and interfaces, Theoretical Physics, INAC, MEM
  • Laboratory : INAC / MEM
  • CEA code : PsD-DRF-19-0091
  • Contact : yniquet@cea.fr

FDSOI technology scaling beyond 10nm node

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Start date : 1 November 2018

offer n° PsD-DRT-18-0074

FDSOI (Fully-Depleted Silicon On Insulator) is acknowledged as a promising technology to meet the requirements of emerging mobile, Internet Of Things (IOT), and RF applications for scaled technological nodes [1]. Leti is a pioneer in FDSOI technology, enabling innovative solutions to support industrial partners.

Scaling of FDSOI technology beyond 10nm node offers solid perspectives in terms of SoC and RF technologies improvement. Though from a technological point of view, it becomes challenging because of thin channel thickness scaling limitation around 5nm to maintain both good mobility and variability. Thus, introduction of innovative technological boosters such as strain modules, alternative gate process, parasitics optimization, according to design rules and applications, become mandatory [2].

The viability of these new concepts should be validated first by TCAD simulations and then implemented on our 300mm FDSOI platform.

This subject is in line with the recent LETI strategy announcement and investments to develop new technological prototypes for innovative technology beyond 28nm [3].

The candidate will be in charge to perform TCAD simulations, to define experiment and to manage them until the electrical characterization. The TCAD simulations will be performed in close collaboration with the TCAD team. The integration will be done in the LETI clean room in collaboration with the process and integration team. Candidate with out-of-the-BOX thinking, autonomy, and ability to work in team is mandatory.

[1] 22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications, R. Carter et al, IEEE IEDM 2016.

[2] UTBB FDSOI scaling enablers for the 10nm node, L. Grenouillet et al, IEEE S3S 2013.

[3]https://www.usinenouvelle.com/article/le-leti-investit-120-millions-d-euros-dans-sa-salle-blanche-pour-preparer-les-prochaines-innovations-dans-les-puces.

  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, DCOS, Leti
  • Laboratory : DCOS / Leti
  • CEA code : PsD-DRT-18-0074
  • Contact : claire.fenouillet-beranger@cea.fr

AlGaN/GaN HEMTs transfert for enhanced electrical and thermal performances

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Start date : 1 April 2018

offer n° PsD-DRT-18-0060

Due to their large critical electric field and high electron mobility, gallium nitride (GaN) based devices emerge as credible candidates for power electronic applications. In order to face the large market needs and benefit from available silicon manufacturing facilities, the current trend is to fabricate those devices, such as aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs), directly on (111) silicon substrates. However, this pursuit of economic sustainability negatively affects device performances mainly because of self-heating effect inherent to silicon substrate use. New substrates with better thermal properties than silicon are desirable to improve thermal dissipation and enlarge the operating range at high performance.

A Ph.D. student in the lab. has developed a method to replace the original silicon material with copper, starting from AlGaN/GaN HEMTs fabricated on silicon substrates. He has demonstrated the interest of the postponement of a GaN power HEMT on a copper metal base with respect to self heating without degrading the voltage resistance of the component. But there are still many points to study to improve the power components.

Post-doc objectives : We propose to understand what is the best integration to eliminate self-heating and increase the voltage resistance of the initial AlGaN/GaN HEMT. The impact of the component transfer on the quality of the 2D gas will be analyzed.

The same approach can be made if necessary on RF components.

Different stacks will be made by the post-doc and he will be in charge of the electrical and thermal characterizations. Understanding the role of each part of the structure will be critical in choosing the final stack.

This process will also be brought in larger dimensions.

This post-doc will work if necessary in collaboration with different thesis students on power components.

  • Keywords : Engineering science, Materials and applications, Thermal energy, combustion, flows, DCOS, Leti
  • Laboratory : DCOS / Leti
  • CEA code : PsD-DRT-18-0060
  • Contact : julie.widiez@cea.fr
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