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Measuring protein adsorption on surfaces with integrated optical sensors
Start date : 03/02/2025
offer n° CROMA-Photo-10-03-2024
Master 2 thesis/ PFE
5 to 6 months
Measuring protein adsorption on surfaces with integrated optical sensors
The adsorption of proteins on surfaces plays an important role in the biomedical field [1]. For diagnostics, the control of the adsorption of immobilized capture antibodies is crucial for accurate immuno-assays. Because of their tendency to adsorb onto surfaces, therapeutic proteins can be inactivated and lost during their manufacturing, storage and administration to the patient. Moreover, understanding the adsorption process of matrix and bioactive proteins is essential to control the adhesion and the growth of cells for tissue engineering.
To investigate the interactions of proteins with surfaces, several label-free methods like surface plasmon resonance, quartz crystal microbalance with dissipation can be used [1]. An alternative approach has been studied in the past by CROMA and LMGP.
The CROMA laboratory has a long experience in integrated photonics and in particular in integrated photonic sensors. Complete fabrication and characterization tools for optical integrated circuits on glass substrates are available, including clean room facilities [2]. In this context, we proposed a device based on an asymmetric Mach-Zehnder interferometer structure. Our first results show that the device is sensitive enough to detect the binding of the bovine serum albumin protein on the glass surface [3]. We aim at assessing the sensitivity of the interferometer by testing other proteins of different sizes and several protein assemblies. In addition, even if this approach seems to be very promising, the performances of the device should be improved. Among the several possibilities that can be explored in the proposed internship, there is the precise delimitation of the interaction area between the proteins and one arm of the interferometer. Alternative approaches can also be studied, for instance by fabricating a Bragg grating interacting with an integrated waveguide, to be perturbed by the protein binding (Bragg gratings on glass have long been exploited by CROMA for integrated DFB lasers). There is furthermore the need of improving the data treatment so to quantify more precisely the acquisition noise or perform time-resolved acquisitions. Finally, it would be interesting to study packaging and microfluidics solutions to allow to conduct measurements without requiring a fully equipped optical bench.
To fulfill the objective of the internship, the student will have to:
- Become acquainted with the subject through detailed bibliographic research on the working principle of the sensor and the modeling of bio-layers.
- Fabricate devices with clean room micro-fabrication processes and with the ion-exchange facilities available at CROMA (both Mach-Zehnder and Bragg grating approaches).
- At the LMGP, prepare and deposit several proteins. The functionalization of the fabricated sensor to obtain hydrophilic or hydrophobic surfaces can be performed as well.
- Characterize the optical response of the sensor and correlate it with the theoretical models.
- Develop a robust data treatment strategy allowing to observe the evolution of protein binding with respect to time.
Advisors:
Charlotte VENDRELY charlotte.vendrely@grenoble-inp.fr +33 (0) 56 52 93 58
Davide BUCCI davide.bucci@phelma.grenoble-inp.fr +33 (0)4 56 52 95 39
[1] Migliorini, E., Weidenhaupt, M., Picart, C. (2018) Practical guide to characterize biomolecules adsorption on solid surfaces. Biointerphases 13, 06D303.
[2] Allenet, T., Geoffray, F., Bucci, D., Canto, F., Moisy, P., & Broquin, J. E. (2019). Microsensing of plutonium with a glass optofluidic device. Optical Engineering, 58(6), 060502.
[3] Hoang, T.G. Study of protein adsorption on glass surface via an integrated photonic sensor. Grenoble Alpes University. Master Thesis. 2024
- Keywords : Engineering sciences, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc
- Laboratory : FMNT / IMEP-LaHc
- CEA code : CROMA-Photo-10-03-2024
- Contact : davide.bucci@phelma.grenoble-inp.fr
Spintronics in graphene over transition metal dichalcogenides: Simulations
Start date : 03/02/2025
offer n° CROMA-CMNE-10-03-2024
MASTER 2 – Duration: 6 months -Start period: February/ March 2025
Possibility of PhD thesis
Context :
In the context of spintronics, graphene is considered an ideal platform thanks to its very weak spin-orbit coupling (SOC), which allows spin scattering lengths of up to a few tens of micrometers [1]. For the same reason, however, spin manipulation is complicated. Transition metal dichalcogenides (TMDs), another class of two-dimensional materials, exhibit a considerable SOC due to the heavy metals they comprise. When graphene is over a TMD, a SOC is induced into graphene by proximity effect [2]. TMDs comprising a heavy metal element, such as WSe2, give rise to a pronounced SOC, which in turn results in a topological insulator and a spin quantum Hall effect.
[1] “Graphene spintronics: the European Flagship perspective”, S. Roche et al., 2D Mater. 2, 030202 (2015)
[2] “Trivial and inverted Dirac bands and the emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides”, M. Gmitra et al., Phys. Rev. B 93, 155104 (2016
Work program & Skills acquired during internship :
This internship is jointly proposed by CROMA (Centre for Radiofrequencies, Optic and Micro-nanoelectronics in the Alps) and SPINTEC (SPINtronique et TEchnologie des Composants) research laboratories affiliated with Univ. Grenoble Alpes, Grenoble INP-UGA, CEA and CNRS. The objective is to study, through simulations based on the density functional theory, the effect of a polycrystalline TMD on the band structure of the overlying graphene.
This is a common disorder in non-exfoliated TMDs, which warrants further study of how it affects the SOC induced in graphene. The different crystal orientations could lead to the formation of spin-polarized states in graphene at the grain boundaries, with important theoretical and application consequences. Thanks to the balance of theory and numerical computation that exists between our two labs, the intern student will develop important skills in the use of ab initio and tight-binding codes, thus enabling her or him to continue working in our labs with activities focused on magnetic or ferroelectric memories for low-power electronics and artificial intelligence.
CROMA
https://croma.grenoble-inp.fr
3, Parvis Louis Néel 17 avenue des Martyrs
SPINTEC
https://www.spintec.fr
38016 Grenoble 38054 Grenoble
Contacts:
• Alesssandro CRESTI alessandro.cresti@grenoble-inp.fr
• mair.chshiev@cea.fr
Requirement:
(i) understanding of quantum mechanics and solid state physics,
(ii) basic knowledge in computers with Linux operating system and/or basis in programming languages,
(iii) previous experience in density functional theory is a plus.
Requested background: Master 2
Duration: 6 months
Start period: February/ March 2025
Possibility of PhD thesis : YES
- Keywords : Engineering sciences, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc
- Laboratory : FMNT / IMEP-LaHc
- CEA code : CROMA-CMNE-10-03-2024
- Contact : alessandro.cresti@grenoble-inp.fr
Silicon Carbide microelectrode array for neural interfacing
Start date : 01/03/2024
offer n° IMEPLAHC-CMNE-12-12-2023
M2 INTERSHIP
Silicon Carbide microelectrode array for neural interfacing
Electric brain computer interfaces are based on electrode that collect or stimulate the neural activity.
For two decades many types of intracortcial microelectrode arrays have been developed nevertheless long lasting neural implants are still missing to allow a proper of this technology toward clinical application. In this context, the SiCNeural project carried out by a French consortium is considering silicon carbide technology to overcome this barrier. Indeed, SiC offers multiple advantage for neural interface such including biocompatibility and high chemical stability. In this project, 60 microelectrode array for in vitro studies are developed to assess the performances of the SiC components for neural recording and stimulation.
The role of the candidate will be to evaluate the electrochemical properties of the electrode array by cyclic voltammetry and impedance spectroscopy. The measurement will be performed both in physiological-like medium and in the presence of redox couple.
The candidate will have to implement a dedicated python code to automatize the analysis over the 60 electrode. Depending on the results, the candidate will be able to participate to the recording and stimulation of neural explants.
The candidate will participate to the SiCNeural project meeting to present and discuss her/his results.
This project is financially supported by ANR (French National Research Agency).
Requirement:
Good level in semi-conductor physics, good basics in impedance spectroscopy, standard basis in python coding. Some basis electrochemistry would be appreciated.
Starting date:
March 1st 2024
Duration:
5- 6 months
Location:
Grenoble Institute for Neurosciences (GIN) and IMEP-LAHC, Grenoble
Contact:
GIN : Clément Hébert
IMEP-LaHC : Edwige Bano
Web sites:
https://neurosciences.univ-grenoble-alpes.fr
https://imep-lahc.grenoble-inp.fr/
https://anr.fr/en/funded-projects-and-impact/fundedprojects/project/funded/project/b2d9d3668f92a3b9fbbf7866072501ef3f8b27fa36/?tx_anrprojects_funded%5Bcontroller%5D=Funded&cHash=acf2d0654534921c231ab26c503df423
- Keywords : Engineering sciences, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc
- Laboratory : FMNT / IMEP-LaHc
- CEA code : IMEPLAHC-CMNE-12-12-2023
- Contact : edwige.bano@grenoble-inp.fr
(filled) Characterization of dielectric/silicon interfaces using second harmonic generation
Start date : 01/02/2024
offer n° IMEPLAHC-CMNE-12-01-2024
Characterization of dielectric/silicon interfaces
using second harmonic generation
Starting date: February 2024
Duration: 5-6 months
The microelectronics and optoelectronics industry relies on complex dielectric/silicon stacked structures. Such structures, which are needed in cameras, displays, MOS transistors, …, must have very well-defined material properties but also electrical properties in order for the device to work properly.
One challenge associated with the development of those stacks is to be able to characterize their electrical properties at the chip level and in a non-destructive fashion.
A novel method to achieve non-destructive electrical characterization of interfaces using second harmonic generation (SHG) is currently under active development at IMEP-LaHC, within a collaboration with STMicroelectronics. This technique has passed the demonstration stage, but in order to be used as an in-line metrology tool in the industry, it needs to prove its ability
to distinguish and quantify two different electrical properties of the interfaces: the trap density and the fixed charges. In order to provide this functionality, a calibration procedure of the raw results from SHG measurement .must be developed and it is the aim of the internship. The calibration procedure will be obtained by characterizing simple
stacks using both SHG and other established characterization methods such as capacitance – voltage (C-V) measurements.
During the internship, the work will include:
- Understanding theoretical aspects: second harmonic generation, electric field distribution in semiconductor structures, charges and defaults at the
interface between dielectric and semiconductor materials. - Using SHG characterization tool available at IMEP-LaHC to test simple stack structures under different configurations (influence of the laser power, influence of the substrate bias, …)
- Develop a model to fit the experimental curves.
- Compare the SHG measurement with C-V measurements in order to provide a method to separate traps and fixed charges densities from SHG measurements.
The intern will work in close collaboration with permanent researchers and a post-doctorate fellow involved in this project from the laboratory.
She/he will participate to the meetings with STMicroelectronics to discuss project advancements. We are looking for motivated candidates, with strong knowledge in non-linear optics and/or semiconductor physics and who are willing to actively participate to a collaborative project. During this multidisciplinary internship, the student will develop both experimental and theoretical skills that can be put to profit for his/her future career in both academic and industrial worlds.
Applicants must send CV and motivations to the contact indicated below. Interviews will be conducted to explain the project and assess whether both side will benefit from the collaboration.
Contacts:
Irina IONICA, Irina.Ionica@grenoble-inp.fr
Lionel BASTARD, Lionel.Bastard@grenoble-inp.fr
- Keywords : Engineering science, Engineering sciences, Electronics and microelectronics - Optoelectronics, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc
- Laboratory : FMNT / IMEP-LaHc
- CEA code : IMEPLAHC-CMNE-12-01-2024
- Contact : Irina.Ionica@grenoble-inp.fr
- This Internship position has been filled. Thank you for your interest
(filled) Photonic physical unclonable functions for secure neuromorphic photonic accelerators.
Start date : 01/02/2024
offer n° IMEPLAHC-PHOTO-11-10-2023
PHOTONIC PHYSICAL UNCLONABLE FUNCTIONS FOR SECURE NEUROMORPHIC PHOTONIC ACCELERATORS
The rising needs of processing information at the edge for low latency, high speeds, and energy efficiency purposes leveraging edge-computing as well as IoT devices (75 billion expected by 2025) for data collection and processing demands for more robust and reliable security layers to guarantee hardware integrity and information security. Security layers are a fundamental part of our hardware and digital infrastructure fulfilling several key functions e.g., assuring that a hardware sub-system is not counterfeit, that a client has authentication rights onto a server or that generated/processed data come from a non-corrupted accelerator. Counterfeiting poses a serious threat to the security of large-scale systems relying on the integration of several sub-systems e.g., counterfeit chips have been found in ballistic missiles and fighter jets. Besides, the massive exchange of sensitive data in the context of edge
computing for applications such as autonomous driving, requires that pitfalls shall not be exploited by an attacker to
compromise the security of the platform.
The focus of this work will be to develop novel security layers that do not rely on the physical storage of a digital secret key in memory, potentially accessible exploiting SW or HW vulnerabilities. Physical unclonable functions (PUFs) represent a recent class of security layers that can be used for applications in cryptography e.g., end-to-end encryption, blockchain, secure data storage etc. Fabrication tolerances in CMOS platforms guarantee the intrinsic HW
unclonable character of such solutions and contribute to the complexity of their behavior for well-designed architectures.
Although electronic PUFs are currently predominant, they have been shown to be vulnerable to machine learning attacks. Conversely, photonic PUFs have demonstrated an increased strength against machine learning attacks due to their richer responses and larger number of physical quantities for key generation e.g., phase, amplitude, polarization as well as superior stability and manifold implementations of optical non-linearities.
In the framework of the Horizon Europe research project NEUROPULS (NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS), the PHOTO group at IMEP-LAHC aims to develop novel silicon photonic PUFs for hardware integrity and information security. This work will allow IMEC-LAHCand the other consortium partners involved in security tasks to explore various security protocols at a prototype level (photonic chips will be fabricated by CEA-LETI in a worldwide unique silicon photonics platform with III-V and phasechange materials monolithically integrated) for the next-generation of hardware accelerators based on photonic neuromorphic architectures interfaced with RISC-V core processors to target edge-computing applications.
In this context we are currently looking for a (m/f) Master student for a 6 months contract.
JOB DESCRIPTION
This internship aims to explore novel implementations of photonic PUFs based on CMOS-compatible Silicon Photonics approaches for applications in hardware integrity (identification) and information security (secure authentication, data signature, encryption…).
The work will involve (i) exploring various photonic architectures by means of system-level simulations considering the role of fabrication tolerances on the device modelling, (ii) assessing experimentally the performance of the prototypes (fabrication carried out by CEA-LETI), (iii) carrying out an experimental analysis in terms of robustness and reliability by exploiting techniques well-known in the PUF and reliability communities, and (iv) proposing novel device/system designs and strategies to build more robust and reliable PUFs. The work will involve behavioral and system-level modeling of photonic devices and architectures, robustness and reliability analysis of the designed architectures, and the proposal of novel design/system-level solutions.
PROFILE
You have or are about to obtain an MSc in Electronic or Physical Engineering with strong experience in at least one of the following areas: analog / digital / photonic integrated circuit design, multi-disciplinary or system-level modelling.
Previous experience in design and characterization of photonic devices/systems is a plus. Excellent written and verbal communication skills in English. Fluency in French is also a plus, but not mandatory.
About IMEP-LaHC and PHELMA
The Institut de Microélectronique Electromagnétisme Photonique & LAboratoire d’Hyperfréquences & de Caractérisation, IMEP-LaHC, is a « unité mixte de recherche » (CNRS / Grenoble INP / UGA / Université Savoie Mont Blanc) of 110 people strongly committed in research activities related to micro- and nano-electronics, microphotonics, micro- and nano-systems, microwaves and microwave-photonics. The PHOtonics Terahertz and Optoelectronics (PHOTO) group is a leader in the broad field of photonics and high-speed frequencies, with research projects and collaborations at both national, European, and international level.
Advisor
Fabio Pavanello – email: fabio.pavanello@cnrs.fr
References
1) F Pavanello et al., “Recent advances in photonic physical unclonable functions“, 2021 IEEE European Test Symposium, 2021: https://hal.science/hal03336585/file/Pavanello2021_Recent_Advances_in_Photonic_Physical_Unclonable_Functions.pdf
2) Bryan T Bosworth et al., “Unclonable photonic keys hardened against machine learning attacks”, APL Photonics 5, 010803 (2020): https://doi.org/10.1063/1.5100178
3) F. Pavanello et al., “NEUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS”, 2023 IEEE European Test Symposium, 2023: https://arxiv.org/abs/2305.03139
4) Jean-Emmanuel Broquin, “Ion-exchanged integrated devices”, Integrated Optics Devices V, 4277, 105-117, SPIE, 2001
5) https://www.leti-cea.fr/cea-tech/leti/Documents/d%C3%A9monstrateurs/Flyer_Silicon%20PIC_num.pdf
- Keywords : Electronics and microelectronics - Optoelectronics, Electronics and microelectronics - Optoelectronics, FMNT, IMEP-LaHc
- Laboratory : FMNT / IMEP-LaHc
- CEA code : IMEPLAHC-PHOTO-11-10-2023
- Contact : fabio.pavanello@cnrs.fr
- This Internship position has been filled. Thank you for your interest