News : Solid state physics, surfaces and interfaces

January 01 2023

Strain driven Group IV photonic devices: applications to light emission and detection

Straining the crystal lattice of a semiconductor is a very powerful tool enabling controlling many properties such as its emission wavelength, its mobility…Modulating and controlling the strain in a reversible fashion and in the multi% range is a forefront challenge. Strain amplification is a rather recent technique allowing accumulating very significant amounts of strain in […] >>

January 01 2023

Atomic layer growth of 2D thin films for RF-switches

In the Leti campus, the silicon technology division aims to define, develop, and process materials for advanced electrical device integration. In particular, we are studying advanced thin film deposition, on vacuum equipment and at angstrom scale. This post-doctoral position is part of a project including multiple French laboratories; the objective is to explore the applicative […] >>

January 01 2023

Superconductivity in systems with local inversion symmetry breaking

Global inversion symmetry or time reversal symmetry have been long regarded as fundamental ingredients to form a superconducting state. However nowadays, several systems have been found which are superconducting even though they break locally inversion symmetry, sometimes together with broken time reversal symmetry. Prominent examples are the uranium based ferromagnetic superconductors URhGe and UCoGe (breaking […] >>

January 01 2023

Group IV single photon detectors

Detection of single photons boosted the development of quantum information processing, as well as finding a wide range of applications in astronomy, sensing, metrology, LiDAR, and biosensing technologies.(1) Single photon detectors (SPDs) require high quantum efficiency (>90%), low dark count rates, and ultra-fast response. State of the art superconducting nanowire SPD (SNSPD) can deliver superior […] >>

January 01 2023

Measuring the electrostatic fields in AlGaN LEDs for UV emission.

In this subjet we will develop off-axis electron holography for the measurement of electrostatic fields in AlGaN quantum well structures for UV emission. Electron holography measures the phase of electrons from an interference pattern. As the phase change of the electrons is proportional to the potentiel in the specimen, then this can be used to […] >>
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