News : Engineering sciences

January 01 2023

Opto-microfluidic system for ultra-sensitive quantitative analysis: application to the diagnosis and monitoring of cardiovascular diseases

The DTBS at Leti develops new technologies to invent tomorrow’s medical diagnostic and therapeutic innovations in collaboration with public hospitals and universities. Inside this department, the LSMB lab gathers a multidisciplinary team to design and produce microfluidic systems for healthcare and biology applications. In collaboration with researchers from IRIG, the lab has set-up an innovative […] >>

January 01 2023

Modelling of device aging for energy conversion : toward predictive maintenance of power converters ?

The conversion of electrical energy is currently a major issue within our societies, whether to reduce losses, to allow the integration of a maximum of renewable energy from wind or solar power or to have cleaner mobility (electric vehicles, whatever their size, individual or collective), in industry as well as in the residential sector. The […] >>

January 01 2023

Inductor less DC/DC isolated converter

The aim of this thesis is to design high-efficiency power converters based on resonating piezoelectric transducers. A large part of the work is to develop the electrical cycle able to energetically maintain the piezoelectric resonator in resonance and ensure zero-voltage switching, for electrical energy transfer from the source to the piezoelectric resonator or from the […] >>

January 01 2023

Development of innovative activation plasma processes for direct wafer bonding

For microelectronics industry, SOI (Silicon on Insulator) structure elaboration for the new generation of integrated circuits fabrication relies on wafer bonding by molecular adherence technology. It is based on direct bonding between two surfaces thanks to plasma activation. In the Ph.D.’s framework, we propose to study and to develop new activation processes by plasma in […] >>

January 01 2023

Ferroelectric field effect transistor (FeMFET) for multi-bit per cell memories and in-memory computing applications

The recent discovery of ferroelectricity in hafnium oxide (HfO2) thin films generates a strong interest for ultra-low power non volatile memories, in which the information is stored by the orientation of the electric dipoles in this material. Among those memories, the ferroelectric field effect transistor (FeFET) is quite appealing to combine logic and memory operations […] >>
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