Coupling of advanced characterization techniques to study 2D material growth and integration

Two-dimensional (2D) materials are defined as crystalline solids consisting of a single layer of atoms, making their properties remarkable. Compared to their massive form, they can present outstanding semiconducting characteristics that can be exploited for many applications (CMOS, memories, photonics, photovoltaics, etc.). However, their integration into components via standard microelectronics processes remains a challenge and intensive research is devoted to develop optimal fabrication techniques and explore their structural, electronic and optical properties.

Since the properties of 2D materials can vary at the nanometric scale depending on the fabrication and integration processes, a multi-technique and multi-scale characterization is necessary for an in-depth understanding of their characteristics.

This thesis aims to develop and optimize co-localized analysis methodologies which allow the correlation between optical, electronic, and chemical properties at the local scale (< 10 µm). Thus, optical techniques by Raman and photoluminescence (PL) will be combined with electron photoemission techniques (XPS, PEEM, k-PEEM), electron microscopy (SEM) to have an insightful view of their properties: band structure, stoichiometry, doping, strain, structural defects. Finally, specific characterization modes will be implemented such as operando measurements on devices or optical near-field techniques to improve spatial resolution.

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