Development of innovative activation plasma processes for direct wafer bonding

For microelectronics industry, SOI (Silicon on Insulator) structure elaboration for the new generation of integrated circuits fabrication relies on wafer bonding by molecular adherence technology. It is based on direct bonding between two surfaces thanks to plasma activation. In the Ph.D.’s framework, we propose to study and to develop new activation processes by plasma in order to reach industrials needs.

Ph.D. program’s purpose is to propose innovative activation plasma processes to promote direct wafer bonding. These processes will be proposed thanks to deep understanding of plasma / surface interaction mechanisms.

To lead your research activity, you would be able to benefit privileged environment offered by CEA-Leti with state of the art tool for process development and for characterization (plasma and surface). You will work on a last generation plasma activation tool associated with in-situ plasma diagnostic device (OES). You will characterize the surface using numerous tools for physicochemical and topographical analyses (FTIR, XPS, AFM, OCA, etc.).

Ph.D program will take place in the highly technological ecosystem of CEA-Leti in Grenoble : Clean-rooms from Technological Platform Department (DPFT) and Nano-Characterization Platform (PFNC).

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