99 results found

[Thesis]

Study and characterization of the passivation layer of photodiodes for the optimization of the next generations of cooled infrared detectors

Offer N°: SL-DRT-14-0088

Start date: 1 Oct 2014



[Thesis]

Radiolocation Algorithms Adapted to High-Precision Ultra Wideband Rake Receivers Using Multiple Antennas

Offer N°: SL-DRT-14-1136

Start date: 1 Oct 2014

Making possible unprecedented user-centric services (monitoring/smart inventory of personal goods from a smartphone, context-aware indoor navigation, etc.), new radiolocation capabilities appeared in wireless networks are on the verge of modifying in depth our daily life and habits. This revolution might even be comparable to that of GSM cellular communications or GPS-based car navigation in the past.



[Thesis]

Cleaning and wet etching processes for metal contact formation on III-V and Ge materials

Offer N°: SL-DRT-14-0122

Start date: 1 Sep 2014

Continued performance scaling of silicon MOS transistors meets immense challenges at sub-10 nm. Therefore, scaling-free technologies are now strongly needed to achieve further improvement of CMOS devices. A number of non-silicon channel materials have been considered for advanced CMOS devices such as SiGe or Ge (PMOS) as well as various III-V materials combinations including InGaAs, GaAs, InAs (NMOS).



[Thesis]

Characterization and impact of metallic contamination on III/V materials

Offer N°: SL-DRT-14-0132

Start date: 1 Sep 2014

III/V semiconductors are materials used or considered in high concentration photovoltaic cells production (InP, GaAs, GaInP…), in high yield power devices (GaN), as channel material at high electron mobility for the 7nm CMOS generation (InGaAs, InAlAs...) or then in photonics (InP...). The integration of such materials in silicon technologies require the capability to control the substrate cleanliness in metallic contamination.



My offers

  • Loading...

Theme:

Laboratory:

Your search