GaN doping by Ion implantation
Offer N°: SL-DRT-14-0135
In response to societal needs on the preservation of the environment and alternative energy (solar, wind, electric vehicle), the CEA is developing power devices. For this, the CEA has chosen a disruptive technology based on the use of Gallium Nitride which will allow to overcome the theoretical limits of silicon. The GaN-based technologies, however, are much less mature than those based on the use of silicon.
Cleaning and wet etching processes for metal contact formation on III-V and Ge materials
Offer N°: SL-DRT-14-0122
Continued performance scaling of silicon MOS transistors meets immense challenges at sub-10 nm. Therefore, scaling-free technologies are now strongly needed to achieve further improvement of CMOS devices. A number of non-silicon channel materials have been considered for advanced CMOS devices such as SiGe or Ge (PMOS) as well as various III-V materials combinations including InGaAs, GaAs, InAs (NMOS).
Characterization and impact of metallic contamination on III/V materials
Offer N°: SL-DRT-14-0132
III/V semiconductors are materials used or considered in high concentration photovoltaic cells production (InP, GaAs, GaInP…), in high yield power devices (GaN), as channel material at high electron mobility for the 7nm CMOS generation (InGaAs, InAlAs...) or then in photonics (InP...). The integration of such materials in silicon technologies require the capability to control the substrate cleanliness in metallic contamination.
Modular Emission Tomography System based on CdZnTe detectors
Offer N°: SL-DRT-14-0586
The Detector laboratory is developing semiconductor radiation detector based systems for medical imaging (radiology, X-CT, SPECT) and safety applications (baggage inspection, nuclear safety). It has been shown that the improvement of signal processing techniques allows to extract for each detected photon several physical parameters: energy, 3D positioning and timestamp.