GaN doping by Ion implantation
Offer N°: SL-DRT-14-0135
In response to societal needs on the preservation of the environment and alternative energy (solar, wind, electric vehicle), the CEA is developing power devices. For this, the CEA has chosen a disruptive technology based on the use of Gallium Nitride which will allow to overcome the theoretical limits of silicon. The GaN-based technologies, however, are much less mature than those based on the use of silicon.
Scalable coherent interconnect for heterogeneous computing architectures
Offer N°: SL-DRT-14-0160
The subject of this PhD is to build a Network-on-Chip (NoC) ensuring cache coherency in heterogeneous many-cores systems on chip (SoC), thanks to a coherence protocol compatible with protocols of ARM processors.
Nanocharacterization of buried interfaces in III-V semiconductors stacked layers
Offer N°: SL-DRT-14-0137
Nano-devices down-scaling requires a more and more severe control of buried interfaces of nano-layers with a top electrode, using innovative physical characterization methods having a non-invasive and a microscopic character for a direct correlation with electrical measurements performed on micron-size areas.