102 results found


GaN doping by Ion implantation

Offer N°: SL-DRT-14-0135

Start date: 1 Oct 2014

In response to societal needs on the preservation of the environment and alternative energy (solar, wind, electric vehicle), the CEA is developing power devices. For this, the CEA has chosen a disruptive technology based on the use of Gallium Nitride which will allow to overcome the theoretical limits of silicon. The GaN-based technologies, however, are much less mature than those based on the use of silicon.


Scalable coherent interconnect for heterogeneous computing architectures

Offer N°: SL-DRT-14-0160

Start date: 1 Oct 2014

The subject of this PhD is to build a Network-on-Chip (NoC) ensuring cache coherency in heterogeneous many-cores systems on chip (SoC), thanks to a coherence protocol compatible with protocols of ARM processors.


Nanocharacterization of buried interfaces in III-V semiconductors stacked layers

Offer N°: SL-DRT-14-0137

Start date: 1 Sep 2014

Nano-devices down-scaling requires a more and more severe control of buried interfaces of nano-layers with a top electrode, using innovative physical characterization methods having a non-invasive and a microscopic character for a direct correlation with electrical measurements performed on micron-size areas.


Study and characterization of the passivation layer of photodiodes for the optimization of the next generations of cooled infrared detectors

Offer N°: SL-DRT-14-0088

Start date: 1 Oct 2014

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