Nanocharacterization of buried interfaces in III-V semiconductors stacked layers
Offer N°: SL-DRT-14-0137
Nano-devices down-scaling requires a more and more severe control of buried interfaces of nano-layers with a top electrode, using innovative physical characterization methods having a non-invasive and a microscopic character for a direct correlation with electrical measurements performed on micron-size areas.
Characterization and impact of metallic contamination on III/V materials
Offer N°: SL-DRT-14-0132
III/V semiconductors are materials used or considered in high concentration photovoltaic cells production (InP, GaAs, GaInP…), in high yield power devices (GaN), as channel material at high electron mobility for the 7nm CMOS generation (InGaAs, InAlAs...) or then in photonics (InP...). The integration of such materials in silicon technologies require the capability to control the substrate cleanliness in metallic contamination.
Radiolocation Algorithms Adapted to High-Precision Ultra Wideband Rake Receivers Using Multiple Antennas
Offer N°: SL-DRT-14-1136
Making possible unprecedented user-centric services (monitoring/smart inventory of personal goods from a smartphone, context-aware indoor navigation, etc.), new radiolocation capabilities appeared in wireless networks are on the verge of modifying in depth our daily life and habits. This revolution might even be comparable to that of GSM cellular communications or GPS-based car navigation in the past.