75 results found


Advanced multi-scale nanocharacterization of two-dimensional MoS2 and MoSe2 semi-conductor materials and related devices

Offer N°: SL-DRT-16-0494

Start date: 1 Oct 2016

The aim of this PhD thesis is the optimization and implementation of an advanced, multiscale nanocharacterization method combining cutting-edge techniques, for the study of novel two-dimensional semiconductors from the Transition Metal Dichalcogenide class of materials (MoS2, MoSe2) synthetized either by Van Der Walls Molecular Beam Epitaxy or Atomic Layer Deposition.


Optimization of IR Flash LIDAR Sensor for Navigation and 3D Imaging

Offer N°: SL-DRT-16-0975

Start date: 1 Oct 2016


The LIDAR (acronym of LIght Detection And Ranging) is an optical rangefinder intensively used since the sixties for spatial applications. Nowadays, it is a multipurpose sensor, which can be mounted on mobile platforms, such as cars, for autonomous navigation (autonomous car) or aircrafts, for backscatter measurements from the atmosphere.


Angle sensitive pixel for CMOS image sensor

Offer N°: SL-DRT-16-0559

Start date: 1 Oct 2016

CEA/LETI is a leading institute of technological research in France, transferring fundamental research to industry. As a part of the optics and photonics LETI's department (DOPT), visible image sensor lab (LIV) is focused on innovative solutions for CMOS image sensor. Inside this scope, we want to develop new kind of pixels called “angle sensitive pixel”. Such pixels make possible extra-thin sensor as they don't require objective lens to be place in front of the array.


Advances magnetic memory modeling and circuits conception for instant-on zero-leakage electronics

Offer N°: SL-DRT-16-0446

Start date: 1 Sep 2016

To overcome the limitations in terms of current consumption and miniaturization of logic circuits, the semiconductor industry incorporates more components of non-volatile memories within those chips. Among them, the STT-MRAM magnetic memories are the most promising. The attractiveness of this innovative technology comes with its very high programming speed (GHz) and its infinite endurance.

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