Radiolocation Algorithms Adapted to High-Precision Ultra Wideband Rake Receivers Using Multiple Antennas
Offer N°: SL-DRT-14-1136
Making possible unprecedented user-centric services (monitoring/smart inventory of personal goods from a smartphone, context-aware indoor navigation, etc.), new radiolocation capabilities appeared in wireless networks are on the verge of modifying in depth our daily life and habits. This revolution might even be comparable to that of GSM cellular communications or GPS-based car navigation in the past.
Cleaning and wet etching processes for metal contact formation on III-V and Ge materials
Offer N°: SL-DRT-14-0122
Continued performance scaling of silicon MOS transistors meets immense challenges at sub-10 nm. Therefore, scaling-free technologies are now strongly needed to achieve further improvement of CMOS devices. A number of non-silicon channel materials have been considered for advanced CMOS devices such as SiGe or Ge (PMOS) as well as various III-V materials combinations including InGaAs, GaAs, InAs (NMOS).
Characterization and impact of metallic contamination on III/V materials
Offer N°: SL-DRT-14-0132
III/V semiconductors are materials used or considered in high concentration photovoltaic cells production (InP, GaAs, GaInP…), in high yield power devices (GaN), as channel material at high electron mobility for the 7nm CMOS generation (InGaAs, InAlAs...) or then in photonics (InP...). The integration of such materials in silicon technologies require the capability to control the substrate cleanliness in metallic contamination.