Time Domain Analogue and RF Signal Processing to cope with Advanced CMOS design challenges
Offer N°: SL-DRT-14-0214
This Ph.D. Thesis is focused in the research of new integrated circuits using the time and other temporal variables, such as the phase, for representing analog and RF signals in combination with advanced CMOS devices(FinFET, FDSOI)for emerging application requiring ultra-low power consumption for the Internet of things and sensor networks applications.
Scalable coherent interconnect for heterogeneous computing architectures
Offer N°: SL-DRT-14-0160
The subject of this PhD is to build a Network-on-Chip (NoC) ensuring cache coherency in heterogeneous many-cores systems on chip (SoC), thanks to a coherence protocol compatible with protocols of ARM processors.
GaN doping by Ion implantation
Offer N°: SL-DRT-14-0135
In response to societal needs on the preservation of the environment and alternative energy (solar, wind, electric vehicle), the CEA is developing power devices. For this, the CEA has chosen a disruptive technology based on the use of Gallium Nitride which will allow to overcome the theoretical limits of silicon. The GaN-based technologies, however, are much less mature than those based on the use of silicon.
Cleaning and wet etching processes for metal contact formation on III-V and Ge materials
Offer N°: SL-DRT-14-0122
Continued performance scaling of silicon MOS transistors meets immense challenges at sub-10 nm. Therefore, scaling-free technologies are now strongly needed to achieve further improvement of CMOS devices. A number of non-silicon channel materials have been considered for advanced CMOS devices such as SiGe or Ge (PMOS) as well as various III-V materials combinations including InGaAs, GaAs, InAs (NMOS).