76 results found


Study of interconnection and advanced packaging of power devices for power conversion with high yield and high frequency

Offer N°: SL-DRT-16-0350

Start date: 1 Oct 2016

In the laboratory of Components and Circuits for Energy, GaN power devices are developed. They can be used in applications such as inverters for electric cars or photovoltaic systems. New developments of interconnection and assembly are required to integrate the power devices in modules to meet the requirements of high temperature (200 to 250°C) and high frequency. In a first stage, the PhD student will have to select the bonding materials, set up and characterize the die attach process.


Advanced multi-scale nanocharacterization of two-dimensional MoS2 and MoSe2 semi-conductor materials and related devices

Offer N°: SL-DRT-16-0494

Start date: 1 Oct 2016

The aim of this PhD thesis is the optimization and implementation of an advanced, multiscale nanocharacterization method combining cutting-edge techniques, for the study of novel two-dimensional semiconductors from the Transition Metal Dichalcogenide class of materials (MoS2, MoSe2) synthetized either by Van Der Walls Molecular Beam Epitaxy or Atomic Layer Deposition.


Optimization of IR Flash LIDAR Sensor for Navigation and 3D Imaging

Offer N°: SL-DRT-16-0975

Start date: 1 Oct 2016


The LIDAR (acronym of LIght Detection And Ranging) is an optical rangefinder intensively used since the sixties for spatial applications. Nowadays, it is a multipurpose sensor, which can be mounted on mobile platforms, such as cars, for autonomous navigation (autonomous car) or aircrafts, for backscatter measurements from the atmosphere.


Angle sensitive pixel for CMOS image sensor

Offer N°: SL-DRT-16-0559

Start date: 1 Oct 2016

CEA/LETI is a leading institute of technological research in France, transferring fundamental research to industry. As a part of the optics and photonics LETI's department (DOPT), visible image sensor lab (LIV) is focused on innovative solutions for CMOS image sensor. Inside this scope, we want to develop new kind of pixels called “angle sensitive pixel”. Such pixels make possible extra-thin sensor as they don't require objective lens to be place in front of the array.

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