69 results found


Development of high resolution photo-modulated Kelvin Probe Force Microscopy for photovoltaics

Offer N°: SL-DRT-15-0619

Start date: 1 Oct 2015

Nowadays, improvements in performance of third generation solar cells are strongly dependent on developing advanced characterization tools capable of mapping the opto-electronic properties of photovoltaic (PV) materials at the nanometer scale. Within the Nano characterisation platform (PFNC), we develop advanced approach based on Atomic Force Microscopy (AFM) and its electrical modes such as Kelvin Probe Force Microscopy (KPFM).


Statistical Models Development for Planarized Surfaces

Offer N°: SL-DRT-15-1028

Start date: 1 Oct 2015

One of Leti R&D axes is focusing on is to improve the form factor (size) while increasing functionality and performances. This is the “More than Moore” approach, where stacking and going up to 3D, whether we are talking about 3D transistors (FinFET), or 3D stacked IC Monolithic 3D IC through wafer bonding, are both CMP-enabled. Whether we go down (shrinking-devices) or up (stacking-devices), surface quality (i.e.


Fabrication and testing of multijunction IIIV on Si solar cells

Offer N°: SL-DRT-15-0714

Start date: 1 Oct 2015

The crystal Silicon photovoltaic industry recently demonstrated record efficiency values over 25%, approaching the Si theoretical limit. Multijunction solar cells based on IIIV materials can overcome this limit: efficiencies over 44% have been reported on 4 junctions under 247suns. Due to the elevated cost of these cells, this technology is dedicated to high concentration.

An intermediate solution consists in combining IIIV and Si materials in order to:


Study of the intra-layer effect, diffusion effect, and shot noise for advanced lithographie

Offer N°: SL-DRT-15-0712

Start date: 1 Sep 2015

CEA-LETI is leading a program for enabling the Multi-beam lithography technology with low energy. In the frame of this industrial consortium, CEA-LETI is proposing a PhD to deeper understand the pattern roughness for Multi-beam lithography. In the first step the candidates will have to characterize the roughness of the pattern with Scanning Electron Microscope (SEM) and 3D Atomic Force Microscope.

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