Cleaning and wet etching processes for metal contact formation on III-V and Ge materials
Offer N°: SL-DRT-14-0122
Continued performance scaling of silicon MOS transistors meets immense challenges at sub-10 nm. Therefore, scaling-free technologies are now strongly needed to achieve further improvement of CMOS devices. A number of non-silicon channel materials have been considered for advanced CMOS devices such as SiGe or Ge (PMOS) as well as various III-V materials combinations including InGaAs, GaAs, InAs (NMOS).
Nanocharacterization of buried interfaces in III-V semiconductors stacked layers
Offer N°: SL-DRT-14-0137
Nano-devices down-scaling requires a more and more severe control of buried interfaces of nano-layers with a top electrode, using innovative physical characterization methods having a non-invasive and a microscopic character for a direct correlation with electrical measurements performed on micron-size areas.
Modular Emission Tomography System based on CdZnTe detectors
Offer N°: SL-DRT-14-0586
The Detector laboratory is developing semiconductor radiation detector based systems for medical imaging (radiology, X-CT, SPECT) and safety applications (baggage inspection, nuclear safety). It has been shown that the improvement of signal processing techniques allows to extract for each detected photon several physical parameters: energy, 3D positioning and timestamp.