102 results found

[Thesis]

Cleaning and wet etching processes for metal contact formation on III-V and Ge materials

Offer N°: SL-DRT-14-0122

Start date: 1 Sep 2014

Continued performance scaling of silicon MOS transistors meets immense challenges at sub-10 nm. Therefore, scaling-free technologies are now strongly needed to achieve further improvement of CMOS devices. A number of non-silicon channel materials have been considered for advanced CMOS devices such as SiGe or Ge (PMOS) as well as various III-V materials combinations including InGaAs, GaAs, InAs (NMOS).



[Thesis]

Nanocharacterization of buried interfaces in III-V semiconductors stacked layers

Offer N°: SL-DRT-14-0137

Start date: 1 Sep 2014

Nano-devices down-scaling requires a more and more severe control of buried interfaces of nano-layers with a top electrode, using innovative physical characterization methods having a non-invasive and a microscopic character for a direct correlation with electrical measurements performed on micron-size areas.



[Thesis]

Study and characterization of the passivation layer of photodiodes for the optimization of the next generations of cooled infrared detectors

Offer N°: SL-DRT-14-0088

Start date: 1 Oct 2014



[Thesis]

Modular Emission Tomography System based on CdZnTe detectors

Offer N°: SL-DRT-14-0586

Start date: 1 Oct 2014

The Detector laboratory is developing semiconductor radiation detector based systems for medical imaging (radiology, X-CT, SPECT) and safety applications (baggage inspection, nuclear safety). It has been shown that the improvement of signal processing techniques allows to extract for each detected photon several physical parameters: energy, 3D positioning and timestamp.



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