100 results found


New porous materials in the form of nanofibers

Offer N°: SL-DRT-14-0572

Start date: 1 Oct 2014

Discovered in the early 1900's, electrospinning is a long-known polymer processing technique that has recently been rediscovered. It allows for the creation of nanofibers (fibers with a diameter well in the realm of nano dimensions) that can be collected to form a non-woven fabric. The resulting material can be applied to create many products including medical devices, tissue engineering scaffolds, clothing and filtration media.


Modular Emission Tomography System based on CdZnTe detectors

Offer N°: SL-DRT-14-0586

Start date: 1 Oct 2014

The Detector laboratory is developing semiconductor radiation detector based systems for medical imaging (radiology, X-CT, SPECT) and safety applications (baggage inspection, nuclear safety). It has been shown that the improvement of signal processing techniques allows to extract for each detected photon several physical parameters: energy, 3D positioning and timestamp.


Study of assembly technologies for high temperature power components

Offer N°: SL-DRT-14-0568

Start date: 1 Sep 2014

This thesis is integrated in LETI's developments of power transistors, based on gallium nitride material. This wide-bandgap semiconductor allows increased performances of energy converters in terms of efficiency and power density. Compared to silicon components, it permits to work at higher frequencies and temperatures (over 200°C). However, such characteristics imply specific packaging technologies, that are not available in current package technologies developed for silicon transistors.


Study of extrinsic doping in high operating temperature (HOT) HgCdTe photodetectors

Offer N°: SL-DRT-14-0752

Start date: 1 Oct 2014

CEA/Leti is, in collaboration with the Grenoble based company Sofradir, one of the world leaders in the research and development of Infrared photodetectors made in the II-VI semi-conductor HgCdTe. One of the main challenges in this field is the increase in operating temperature of the detectors. Theoretically, the highest operating temperature in HgCdTe photodiodes should be achieved in extrinsically doped material.

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