Cleaning and wet etching processes for metal contact formation on III-V and Ge materials
Offer N°: SL-DRT-14-0122
Continued performance scaling of silicon MOS transistors meets immense challenges at sub-10 nm. Therefore, scaling-free technologies are now strongly needed to achieve further improvement of CMOS devices. A number of non-silicon channel materials have been considered for advanced CMOS devices such as SiGe or Ge (PMOS) as well as various III-V materials combinations including InGaAs, GaAs, InAs (NMOS).
Modular Emission Tomography System based on CdZnTe detectors
Offer N°: SL-DRT-14-0586
The Detector laboratory is developing semiconductor radiation detector based systems for medical imaging (radiology, X-CT, SPECT) and safety applications (baggage inspection, nuclear safety). It has been shown that the improvement of signal processing techniques allows to extract for each detected photon several physical parameters: energy, 3D positioning and timestamp.
New porous materials in the form of nanofibers
Offer N°: SL-DRT-14-0572
Discovered in the early 1900's, electrospinning is a long-known polymer processing technique that has recently been rediscovered. It allows for the creation of nanofibers (fibers with a diameter well in the realm of nano dimensions) that can be collected to form a non-woven fabric. The resulting material can be applied to create many products including medical devices, tissue engineering scaffolds, clothing and filtration media.
Study of assembly technologies for high temperature power components
Offer N°: SL-DRT-14-0568
This thesis is integrated in LETI's developments of power transistors, based on gallium nitride material. This wide-bandgap semiconductor allows increased performances of energy converters in terms of efficiency and power density. Compared to silicon components, it permits to work at higher frequencies and temperatures (over 200°C). However, such characteristics imply specific packaging technologies, that are not available in current package technologies developed for silicon transistors.