SPAD for High resolution depthmap
Offer N°: SL-DRT-16-0908
SPAD (Single Photon Avalanche Diode) is the more accurate TOF (Time Of Flight) distance measurement. Some specific issues appear when SPADs are used in matrix to get a depthmap of the scene: sensitivity, compactness, internal speed and integration density are of major concern. Existing SPAD matrix do not allow a large diffusion, although the need is great to improve embedded image treatment efficiency.
Elaboration and transfer of tensile strained thin films
Offer N°: SL-DRT-16-0065
Applying tensile strain in a single semiconductor crystal (eg germanium) is a very promising way to tune it into a direct band gap semiconductor. This basic feature can be applied to major outstanding goals of semiconductor and mainly optoelectronic applications.
A2RAM cell: simulation, modeling and performance evaluation
Offer N°: SL-DRT-16-0112
The main idea of this PhD work is to simulate, model and optimize A2RAM memory cell. The first part will focus on A2RAM TCAD simulation in order to evaluate the impact of different technological parameters on the figure of merit of the cell. Special attention will be brought to retention time and so, to different leakage mechanisms. The second part of the PhD will be devoted to the A2RAM cell optimization with the introduction of new concept and/or innovant process brick.