Development of low-k dielectrics for sequential 3D integration
Offer N°: SL-DRT-15-1128
Low-k dielectrics are used for insulation of interconnect levels in integrated circuits. For new applications (sequential 3D integration), it becomes necessary to have low-k materials capable of withstanding high thermal budgets (up to 550 ° C). "Conventional" materials (SiOCH or SiCNH deposited by PECVD) does not a priori meet these specifications.
Study of low temperature junctions for 3DVLSI integration for 7nm node and beyond
Offer N°: SL-DRT-15-1082
The down scaling of MOSFET device is becoming harder and the development of future generation of MOSFET technology is facing some strong difficulties. To overcome this problem, the vertical stacking of MOSFET in replacement of the conventional planar structure is currently strongly investigated. This technic, called 3D VLSI integration, attracts a lot of attention, in research and in the industry.
Electrical characterization & modeling of the trapping phenomena (BTI, RTN) impacting the reliability of nanowires transistors for sub 10nm nodes
Offer N°: SL-DRT-15-1133
In advanced CMOS technologies, microscopic defects localized at the Si interface or within the gate oxide degrade the performance of CMOS transistors, by increasing the low frequency noise (LFN). These defects are generally induced by the fabrication process or by the ageing of the device under electrical stress In SiGe or III-V channel transistors, their density is much higher than in silicon and their microscopic nature still is unknown.
Hardware acceleration for homomorphic encryption
Offer N°: SL-DRT-15-0179
The emergence of cloud computing and cyber-physical systems has led to consider security in data treatment as a major concern. In order to insure the confidentiality of managed data, encryption is today widely used.
In 2009, C. Gentry  proposed the first fully homomorphic encryption system, enabling to compute preliminary encrypted data without decrypting them. This progress has opened a significant number of new industrial and research perspectives.