Disruptiv lithography approch based on block copolymers nanoimprint
Offer N°: SL-DRT-16-0184
The nanoscience and nano technology development determine the continual device miniaturisation. Until now, lithography has been the main driving force of this process. Currently chemically amplified photo resists (CAR) for conventional 193nm immersion lithography applications, are used in manufacturing processes to pattern features with dimensions as small as 45nm to 65nm but may not be extendable as feature dimensions shrink to 32 nm and below.
Magnetoelastic sensor operating under low magnetic field and high mechanical stress
Offer N°: SL-DRT-16-0833
The goal of the thesis is to investigate the magnetoelastic effects (variations of the magnetization inside a ferromagnetic body Under mechanical stress), and the developpement of a mechanical stress sensor based on these effects.
Architecture and design of high efficiency wideband power amplifiers in SOI CMOS technology
Offer N°: SL-DRT-16-0825
The trend towards higher data rates leads to the need of wideband RF power amplifiers (PAs). One main challenge is to achieve high PA efficiency over broad bandwidth while maintaining adequate linearity. The objective of the proposed thesis is to study new linear PA architectures with wideband and high efficiency characteristics and then to investigate opportunities to integrate such PAs in SOI CMOS technology.
Towards a technological rupture in plasma processing for nanoscale material modification with sub-nm precision
Offer N°: SL-DRT-16-1040
For advanced CMOS nodes below 20 nm there is a need to produce nanometre-scale strucutres with sub-nm precision without damaging the surface. The CNRS-LTM has recently proposed a new, totally revolutionary, etching concept that uses two autolimiting steps that decorrelate the action of radicals from that of ions.