Innovative materials and synthetis for advance RF devices
Offer N°: SL-DRT-16-0746
There is strong interest to develop new innovative materials for 5th Generation of network telephony switches. These components are integrated on top of CMOS chips and must show low power consumption and reduce dice size with several frequency bands. In this context, the materials based on transition metal chalcogenide have specific electric properties such as resistive transition adapted to the needs of RF switches.
Simulation of programing mechanims of phase change memories with the multi phase-field method
Offer N°: SL-DRT-16-0999
Recently STMicroelectronics has decided to implement PCM for its 28nm technology line in embedded memories for microcontrollers and automotive products. The device's operation relies on reversible and fast switching between the amorphous and crystalline phases of chalcogenide materials, such as Ge2Sb2Te5 (GST)induced by Joule effect during the application of electrical pulses.
Development of new plasma chemistry to etch Mercury Cadmium Telluride for high performances IR detectors
Offer N°: SL-DRT-16-0706
Development of new plasma chemistry to etch Mercury Cadmium Telluride for high performances IR detectors.
Résumé Anglais :
Optical brursts integrated switchs
Offer N°: SL-DRT-16-0707
The increase in the data rate of intra or inter processor transmissions, linked to stringent constraints in terms of latency, seem to lead to the requirement for very high speed (50-100Gbps) point to point optical links integrated into the electronics. However, these links appear to be underused (10-15% of the time only) and due to their simple point to point architecture imply the use of numerous transceivers.