Electrical Characterization and optimization of breakdown voltage for HEMTs power devices on GaN substrate
Offer N°: SL-DRT-14-0869
This PhD thesis is proposed in the context of the definition and the optimization of technologies for power devices on GaN substrate. Devices will be HEMTs transistors with GaN/AlGaN heterojunction. GaN material is promising for such technologies due to its high electron mobility and high level breakdown field.
Innovative Confined Phase Change Memories targeting embedded Non Volatile Memory applications for the 28 nm node and beyond
Offer N°: SL-DRT-14-0100
In the framework of collaboration with STMicroelectronics, LETI is developing the next generation of embedded Phase Change Memories (PCM), which are thought to be able to overcome the limitations of standard embedded Non-Volatile Memories (eNVM) beyond the 28nm technology node. In this technology, the information is coded using the resistance level of the memory cell, which varies whether the Phase Change Materials is in the amorphous or the crystalline state.
Contribution to miniature antennas development with sensing functions
Offer N°: SL-DRT-14-0714
The Ambient Intelligence is a key concept for the development of future information and communication systems. It is based primarily on a new class of communicating sensors in development for several years. These communicating nodes are generally able to interact with their environment by sensing or controlling physical parameters.
New paradigms for image aquisition and associated embedded processing for future nanometric SoC
Offer N°: SL-DRT-14-0126
the aim of this PhD is to revisit the images acquisition to make it robust and scalable in nanoscale technologies (such as 28nm FDSOI) by coupling new modes of image capture along with integrated co-processing, to fully exploit the integration density and processing capabilities offered by these future nodes.