Epitaxy of quaternary InGaAlN layers for high performace transitors
Offer N°: SL-DRT-16-0659
CEA is dedicated to working on Atomic and Alternative Energy, to advance clean technologies using science and technology. As part of these developments, CEA-LETI is developing high power transistors and low energy LEDs with several major companies. For high power transistors, the goal is to have components working at high voltage, and passing a current of up to 100A.
Ion-beam-induced migration of HgCdTe dopants and application to p-n junction formation
Offer N°: SL-DRT-16-0649
HgCdTe crystal is a semiconductor material with the unusual feature to be highly ion-beam sensitive. This thesis proposal covers the specificity of this material to exhibit a migration of dopants under ion-beam irradiation. This specificity, demonstrated for some dopants of HgCdTe, is of major technological interest by letting foreseen the possibility to finely tune p-n junction.
3D holographic microscopy: study of a new interferometric microscope for the real-time 3D imaging of complex biological structures
Offer N°: SL-DRT-16-0139
Our laboratory develops unconventional microscopy techniques like lensless and interferometric microscopy. The subject of this thesis is to extend a previous work dedicated to microbiology to more complex structures like cells network and skin tissues. During this thesis, the student will further develop the instrument and the processing method to provide true 3D images without specimen labelling.
Impact study and simulation of the a stress field on optical devices in a 3D interposer for advanced silicon photonics.
Offer N°: SL-DRT-16-0430
In the context of short and medium distance transfers of very large amount of numerical data, silicon photonics is an emerging area that provides proven solutions to a major societal challenge. It allows extremely dense data exchanges at low energy cost, perfectly suited to large Datacenters needs.