Innovative materials and synthetis for advance RF devices
Offer N°: SL-DRT-16-0746
There is strong interest to develop new innovative materials for 5th Generation of network telephony switches. These components are integrated on top of CMOS chips and must show low power consumption and reduce dice size with several frequency bands. In this context, the materials based on transition metal chalcogenide have specific electric properties such as resistive transition adapted to the needs of RF switches.
Development of new plasma chemistry to etch Mercury Cadmium Telluride for high performances IR detectors
Offer N°: SL-DRT-16-0706
Development of new plasma chemistry to etch Mercury Cadmium Telluride for high performances IR detectors.
Résumé Anglais :
Optical brursts integrated switchs
Offer N°: SL-DRT-16-0707
The increase in the data rate of intra or inter processor transmissions, linked to stringent constraints in terms of latency, seem to lead to the requirement for very high speed (50-100Gbps) point to point optical links integrated into the electronics. However, these links appear to be underused (10-15% of the time only) and due to their simple point to point architecture imply the use of numerous transceivers.
New processing algorithms of X-ray spectral measurements
Offer N°: SL-DRT-16-0690
The LDET laboratory from LETI is currently at the forefront of the development of multi-energy X-ray detectors with high counting rate, for security applications, non-destructive testing and Medicine. These detectors provide the full energy spectrum of measured photons; consequently, new processing algorithms are required to take into account all the available information. First processing bricks have already been developed by the LDET, nonetheless an in-depth work is necessary.