Thesis, internship, and post-doc opportunities
Development of advanced interconnections for power applications and study of their reliability
Offer N°: 13141
To respond to requirements for environmental protection and alternative energies (solar panels, wind energy, electrical vehicles), CEA-LETI is developing power devices based on HEMT GaN technology (High Electron Mobility Transistor on Gallium Nitride semiconductor). On top of these GaN transistors, a metallic network (also called interconnects) is fabricated to bring current and voltage to the source and drain electrodes of the components.
Advanced Patterning process development for sub 14nm CMOS technology
Offer N°: 13139
For sub 14nm CMOS technology, Optical lithography based Patterning techniques are limited in terms of minimum dimension and minimum pitch. Alternative techniques, such as ebeam lithography, spacer patterning & direct self assembly, are able to overcome the sub 14nm challenges. One of the key points of such patterning techniques is to have innovative plasma etch processes that will enable the integration of these solutions.
Spin Hall effect and spin current absorption
Offer N°: 13137
Spintronics is based on the control of spin currents (different flow of spin up and spin down) to carry and manipulate information. Spin currents produces cab also produce spin transfer torques, and can thus manipulate magnetization states using solely electrical currents. Since a few years the race for industrial developments is on, with mature R&D programs on STT-RAM, a spin transfer torque-based MRAM (Samsung, IBM, Hitachi, Crocus Technology...).
Error correction exploiting the properties of emerging digital memories
Offer N°: 13135
Storage memory is one of the major components of modern electronic systems (smart phone, digital camera …). Besides being non-volatile, an ideal storage memory must be fast, dense, power frugal and cheap. Several new non-volatile memories are currently developed (M-RAM, PC-RAM, CB-RAM, Ox-RAM). For some of them, electrical parameters (charge, resistance) used to encode the binary or multi-valued information in storage cells are distributed over a continuous range.