Thesis, internship, and post-doc opportunities
Doping of III-V semiconductors by low temperature MOCVD for sub-14nm transistors
Offer N°: SL-DRT-14-1106
The thesis' objectives consist in studying the n-type and p-type doping of III-V semiconductors by mean of low temperature MOCVD. Both blanket 300 mm diameter silicon substrates and patterned ones will be used. Such doped layers are predicted to be integrated in future advanced MOSFETs. First, n-type doping af a blanket III-V semiconductor layer will be studied.
frequency agility technique for wideband antenna miniaturization
Offer N°: SL-DRT-14-0986
The miniaturization of wideband antennas is a major scientific challenge. This miniaturization proves very difficult especially when one wants to design directional antennas to overcome the satellite structure effect that supports them . A solution that can enable miniaturization of wideband antennas consists in introducing frequency/impedance agility of the antenna to make it "multi-band".
Development of an innovative technique for dopants characterization at the nanometer scale for advanced microelectronics
Offer N°: SL-DRT-14-1107
Within the Minatec Campus, CEA-LETI focuses its activity on micro and nanotechnologies and their applications. Closely linked to the industry and the academic research, it ensures the development and transfer of innovative technologies in various fields every year.
Study of quantum electronic properties of three terminal superconducting nanostructures
Offer N°: SL-DSM-14-0101
The understanding of physical properties of quantum coherent nanostructures is at the heart of the new fundamental aspects in nanoscience. In this context, superconducting materials are very interesting as described by a macroscopique wave function.