Thesis, internship, and post-doc opportunities

167 results found

[Thesis]

InGaN/GaN structures optimization for the fabrication of light emitting diodes with white monolithic emission.

Offer N°: SL-DRT-14-0668

Start date: 1 Oct 2014

Currently, most light emitting diodes (LEDs) are manufactured based on nitrides materials . The active regions are formed of InGaN quantum well inserted into GaN barriers. The InGaN quantum wells have an indium composition to have a good confinement of electrons and holes at room temperature and to obtain an efficient blue emission at 450 nm for reasonable current densities of the order of 35 A/cm2.



[Thesis]

Chemical surface treatment of semiconductor nanowires

Offer N°: SL-DSM-14-0053

Start date: 1 Oct 2014

Nanowires based on II-VI compound semiconductors (ZnSe, ZnTe, CdSe, CdTe…) can find promising applications as photon emitters, magnetic memories, photovoltaic devices, photocatalysts etc. Because of their nanoscale morphology, the state of the surface plays a determining role in their electronic and optical properties as surface defects can act as electron traps. Chemical methods offer a versatile tool to modify the surface of materials.



[Thesis]

Radiofrequency receiver based on compressive sampling for versatile and adaptive radio communication.

Offer N°: SL-DRT-14-0669

Start date: 1 Oct 2014

The aim of this thesis is to propose a new radiofrequency receiver architecture, based on the compressive sampling technique, and to assess its interest in relaxing analog design constraints and reducing power consumption.



[Thesis]

Study and implementation of new GaN bidirectional transistors in high-performance power electronic structures

Offer N°: SL-DRT-14-0664

Start date: 1 Oct 2014

In recent years, significant progress has been made on new material: Silicon Carbide (SiC) , gallium nitride (GaN ) and Diamond. The JFET and MOSFET SiC components are more suited to high voltage while the GaN components can compete with silicon components up to 600V or 1200V . For the latter, the lateral technology makes it easier to achieve bidirectional current and voltage components without significantly degrading the state.



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