Thesis, internship, and post-doc opportunities
InGaN/GaN structures optimization for the fabrication of light emitting diodes with white monolithic emission.
Offer N°: SL-DRT-14-0668
Currently, most light emitting diodes (LEDs) are manufactured based on nitrides materials . The active regions are formed of InGaN quantum well inserted into GaN barriers. The InGaN quantum wells have an indium composition to have a good confinement of electrons and holes at room temperature and to obtain an efficient blue emission at 450 nm for reasonable current densities of the order of 35 A/cm2.
Chemical surface treatment of semiconductor nanowires
Offer N°: SL-DSM-14-0053
Nanowires based on II-VI compound semiconductors (ZnSe, ZnTe, CdSe, CdTe…) can find promising applications as photon emitters, magnetic memories, photovoltaic devices, photocatalysts etc. Because of their nanoscale morphology, the state of the surface plays a determining role in their electronic and optical properties as surface defects can act as electron traps. Chemical methods offer a versatile tool to modify the surface of materials.
Radiofrequency receiver based on compressive sampling for versatile and adaptive radio communication.
Offer N°: SL-DRT-14-0669
The aim of this thesis is to propose a new radiofrequency receiver architecture, based on the compressive sampling technique, and to assess its interest in relaxing analog design constraints and reducing power consumption.
Study and implementation of new GaN bidirectional transistors in high-performance power electronic structures
Offer N°: SL-DRT-14-0664
In recent years, significant progress has been made on new material: Silicon Carbide (SiC) , gallium nitride (GaN ) and Diamond. The JFET and MOSFET SiC components are more suited to high voltage while the GaN components can compete with silicon components up to 600V or 1200V . For the latter, the lateral technology makes it easier to achieve bidirectional current and voltage components without significantly degrading the state.