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Semipolar Nitride materials templates for short wavelength visible emission

Offer N°: SL-DRT-15-0538

Start date: 1 Sep 2015

III-nitride semiconducting materials are used for the realization of blue diodes at the heart of LED lamps. But when it comes to longer wavelengths (green to red) in the visible domain, these materials encounter difficulties linked to the existence of internal piezoelectric fields that spatially separate electrons and holes in the active region(quantum wells)of the diode, reducing the radiative efficiency.


Study of the surface preparation of III-V and Ge materials with the aim of their integration in the sub 7 nm CMOS transistors

Offer N°: SL-DRT-15-1002

Start date: 1 Sep 2015

Continued performance scaling of silicon MOS transistors meets immense challenges at sub-10 nm. Therefore, scaling-free technologies are now strongly needed to achieve further improvement of CMOS devices. A number of non-silicon channel materials have been considered for advanced CMOS devices such as SiGe or Ge (PMOS) as well as various III-V materials combinations including InGaAs, GaAs, InAs (NMOS).


Gallium nitride nanowire heterostructures

Offer N°: SL-DSM-15-0510

Start date: 1 Oct 2015

The objectives of this thesis are focused on achieving two types of heterostructures based on gallium nitride (GaN) wires, which have both a strong fundamental interest and well-identified applications:


Enhancing task scheduling for real-time systems using profiling information

Offer N°: SL-DRT-15-0521

Start date: 1 Oct 2015

In embedded real-time systems, the scheduler plays a central role as it is responsible of the fulfillment of the temporal deadlines that the tasks of an application are subject to, but also of the achievable performances resulting from the effectiveness of its implementation with respect to the underlying hardware architecture.

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