Thesis, internship, and post-doc opportunities
InGaN/GaN structures optimization for the fabrication of light emitting diodes with white monolithic emission.
Offer N°: SL-DRT-14-0668
Currently, most light emitting diodes (LEDs) are manufactured based on nitrides materials . The active regions are formed of InGaN quantum well inserted into GaN barriers. The InGaN quantum wells have an indium composition to have a good confinement of electrons and holes at room temperature and to obtain an efficient blue emission at 450 nm for reasonable current densities of the order of 35 A/cm2.
Wireless systems buried in complex environments: power transfer and localization
Offer N°: SL-DRT-14-0665
Inductive loop antennas are often used in remote power supply of smart object (power pads of smartphones) or vehicles through the air. Used in RFID HF near field applications, they can provide simultaneously power supply and communication links between tags and reader. Moreover, in more recent applications, they can also be used to localize buried tags.
Ultra fine pitch interconnections and their application to optoelectronics devices
Offer N°: SL-DRT-14-0663
Ultra fine pitch interconnections are recognized as one of the most important challenges in the field of microelectronics, as well as next generation photonics devices using the Silicon Photonics technology. These two topics are studied at CEA/Leti, in the Photonics & Optoelectronics Department. They required a critical technology to be developed : fine-pitch (<10µm) interconnections using microbumps.
Ultra Low power and adaptative analog-to-digital converter in advanced CMOS process
Offer N°: SL-DRT-14-0653
The PhD project aims to study Ultra Low Power and Adaptive Analog-to-Digital Converter (ADC) over a wide operating range of nodes for Internet of Things or sensor networks applications.