Thesis, internship, and post-doc opportunities

173 results found

[Thesis]

Points of interest in Side Channel Attacks of Smart Cards

Offer N°: SL-DRT-14-0092

Start date: 1 Oct 2014

The embedded cryptography can be vulnerable to Side Channel Attacks (SCA) that use the information obtained during algorithm executions. In general, this leakage is physically measured via consumption current or electromagnetic radiation signals. Many statistical methods exist to exploit these signals and retrieve some secret elements. Nowadays, it is more frequently that these methods need to consider specific signal parts, called points of interest.



[Thesis]

Chemical surface treatment of semiconductor nanowires

Offer N°: SL-DSM-14-0053

Start date: 1 Oct 2014

Nanowires based on II-VI compound semiconductors (ZnSe, ZnTe, CdSe, CdTe…) can find promising applications as photon emitters, magnetic memories, photovoltaic devices, photocatalysts etc. Because of their nanoscale morphology, the state of the surface plays a determining role in their electronic and optical properties as surface defects can act as electron traps. Chemical methods offer a versatile tool to modify the surface of materials.



[Thesis]

Hybrid ferromagnetic/antiferromagnetic systems for ultimate spintronics devices

Offer N°: SL-DSM-14-0052

Start date: 1 Nov 2013

Most spintronics devices like for example read-heads, magnetic random access memories and radiofrequency components use exchange bias interactions between a ferromagnet and an antiferromagnet. Part of our activities relies in the fundamental understanding of these interactions in order to further optimize and control the exchange bias properties and their distributions for integration in nanodevices.



[Thesis]

InGaN/GaN structures optimization for the fabrication of light emitting diodes with white monolithic emission.

Offer N°: SL-DRT-14-0668

Start date: 1 Oct 2014

Currently, most light emitting diodes (LEDs) are manufactured based on nitrides materials . The active regions are formed of InGaN quantum well inserted into GaN barriers. The InGaN quantum wells have an indium composition to have a good confinement of electrons and holes at room temperature and to obtain an efficient blue emission at 450 nm for reasonable current densities of the order of 35 A/cm2.



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