Thesis, internship, and post-doc opportunities
Study and implementation of new GaN bidirectional transistors in high-performance power electronic structures
Offer N°: SL-DRT-14-0664
In recent years, significant progress has been made on new material: Silicon Carbide (SiC) , gallium nitride (GaN ) and Diamond. The JFET and MOSFET SiC components are more suited to high voltage while the GaN components can compete with silicon components up to 600V or 1200V . For the latter, the lateral technology makes it easier to achieve bidirectional current and voltage components without significantly degrading the state.
Ultra Low power and adaptative analog-to-digital converter in advanced CMOS process
Offer N°: SL-DRT-14-0653
The PhD project aims to study Ultra Low Power and Adaptive Analog-to-Digital Converter (ADC) over a wide operating range of nodes for Internet of Things or sensor networks applications.
Ultra fine pitch interconnections and their application to optoelectronics devices
Offer N°: SL-DRT-14-0663
Ultra fine pitch interconnections are recognized as one of the most important challenges in the field of microelectronics, as well as next generation photonics devices using the Silicon Photonics technology. These two topics are studied at CEA/Leti, in the Photonics & Optoelectronics Department. They required a critical technology to be developed : fine-pitch (<10µm) interconnections using microbumps.
Modeling and dimensioning of hybrid dataflow and real time systems
Offer N°: SL-DRT-14-0312
The emergence of new applications mixinf both real-time tasks and computationally intensive "best effort" tasks such as the ADAS applications (Advanced Driver Assistance Systems) or augmented-reality (e.g. Google Glass), has created new research issues in both modelling and execution levels. Indeed, an effective implementation of such applications requires the hybridization of formalisms and techniques for hard real-time with other more suitable to computationally intensive systems.