Thesis, internship, and post-doc opportunities

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Study and implementation of new GaN bidirectional transistors in high-performance power electronic structures

Offer N°: SL-DRT-14-0664

Start date: 1 Oct 2014

In recent years, significant progress has been made on new material: Silicon Carbide (SiC) , gallium nitride (GaN ) and Diamond. The JFET and MOSFET SiC components are more suited to high voltage while the GaN components can compete with silicon components up to 600V or 1200V . For the latter, the lateral technology makes it easier to achieve bidirectional current and voltage components without significantly degrading the state.


Propagation channel modelling for Mobile-to-Mobile wireless communications

Offer N°: SL-DRT-14-0625

Start date: 1 Oct 2014


The PhD thesis here proposed is in the field of channel propagation modeling for inter-vehicle and inter-objects wireless communications.


Stress engineering of Gallium Nitride based HFET transistors

Offer N°: SL-DRT-14-0626

Start date:

Current transistors based on Gallium Nitride GaN are HFET for heterostructure field effect transistor based on a epitaxial III(Al, In, Ga)-N/GaN stack. A potential well appears at the interface of both materials that spatially confined the transistor channel in a 2-Dimension Electron Gas (2-DEG)

The electronic density is a function of the polarization of the barrier layer III(Al, In, Ga)-N.


Non-volatile emerging technology-based asynchronous ASIC study and design for very low power application

Offer N°: SL-DSM-14-0293

Start date: 1 Oct 2014

The limits of conventional microelectronics are almost reached in CMOS technology. Several methods attempt to puch them further. The objective of this thesis is to investigate several tracks by combining several advantages of microelectronics, including advanced non-volatile memories such as MRAM (Magnetic Random Access Memory) technology, and type FD-SOI (Fully Depleted SOI Substrate ).

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