Thesis, internship, and post-doc opportunities
Electrical characterization and study of carrier transport in new generation transistors fabricated from III-V materials (InGaAs)
Offer N°: SL-DRT-16-0319
The topic of this thesis is related to the Research effort in more Moore domain to pursue CMOS technology nodes beyond 7nm.
Dual-channel radio-frequency reflectometry on coupled quantum dots and dopants in silicon
Offer N°: SL-DSM-16-0437
We design and fabricate silicon nanowire transistors in which transport at low temperature occurs through a single or two coupled dopants, or through the first electrons or holes of coupled quantum dots. We also built a dual-channel radio-frequency reflectometry setup which allows to probe very small changes in the charge state of these devices, including internal transitions between two dopants or dots which are not detectable by direct transport measurements.
Interaction effects on topological properties of multiterminal Josephson junctions
Offer N°: SL-DSM-16-0253
There is currently an active search for new phases of matter that admit topologically protected edge states. A promising route to realize them consists in combining conventional materials into appropriate heterostructures. Multiterminal Josephson junctions between conventional superconductors may be considered as topological materials themselves. As an example, 4-terminal junctions can accommodate topologically protected zero-energy bound states, which form so-called Weyl singularities.
Helical superconductivity and the anomalous Josephson effect
Offer N°: SL-DSM-16-0265
The interplay of spin-orbit coupling and the Zeeman effect due to a magnetic field plays an important role in the realization of so-called topological superconductivity. The aim of the proposed research is to study this interplay in novel materials such as transition metal dichalcogenide monolayers – twodimensional systems similar to graphene, but with two different atoms in the unit cell and having a strong spin-orbit coupling that is not of the Rashba type.