TEM characterizesresistive RAM in action
Categorie(s) : News, Research
Published : 2 April 2015
Researchers at Leti have characterized RRAM (resistive random-access memory) in operation, at the nanometric scale, using a transmission electron microscope. And the method they used can be applied to other types of memory. The researchers mapped the on/off states’ structures, compositions, and potentials on a memory whose active layer measures less than 20 nm thick.
To characterize the memory, the researchers had to overcome a number of challenges like applying an electric probe to the sample with nanometric resolution, making the electrical contacts without generating too much heat or mechanical stress, and identifying experimental artefacts.
They used a Titan TEM with high-resolution imaging and electron holography. In the future, other techniques could also be used