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Strain engineering on AlN thin films

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Start date : 1 January 2019

offer n° PsD-DRT-19-0023

AlN is one of the prime material due to its outstanding piezoelectric properties for many RF and MEMS applications.

The performances of the devices strongly depend on the piezoelectric properties of the material and one promissing way to tune the properties is to set a mechanical strain to the AlN.

The goal of the post-doctoral position is to strain AlN thin film by transferring them onto various substrates. In the case of flexible polymer substrate, the strain of the polymer can stress AlN.

LETI has ever developed a process dedicated to the transfer of very thin silicon film onto a flexible substrate.

the student will be in charge of :

1/ the transfer of AlN thin onto various substrates

2/ The mechanical and electrical characterization of the transfered films

  • Keywords : Engineering science, Atomic and molecular physics, Materials and applications, DTSI, Leti
  • Laboratory : DTSI / Leti
  • CEA code : PsD-DRT-19-0023
  • Contact : pierre.montmeat@cea.fr
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