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Performance Improvement of silicon nano-gauges for MEMS sensors

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Start date : 1 October 2018

offer n° SL-DRT-18-0781

The piezoresistivity of the silicon nano-gauges is the basis of many CEA-Léti’s MEMS sensors: accelerometers, pressure sensors, gas sensors… and the performance of these sensors is directly conditioned by the performance of the nano-gauges. As part of this thesis, the student will conduct research work to optimize the performances of nano-gauges according to the main parameters related to their technological fabrication process: SOI substrates, doping level, implantation method, geometry, release step (to suspend the nano-gauges), passivation or annealing after release…

In particular, the PhD student will study the low-frequency noise of nano-gauges made on SOI substrates: he will characterize various types of nano-gauges, will seek to understand the mechanisms at the origin of the low-frequency noise in nano-gauges and will make the necessary simulations to reinforce the hypotheses explaining the electrical fluctuations within the nano-gauges.

The maximum mechanical stress acceptable by the nano-gauges and the linearity zone of their piezoresistivity will also be studied, and a thermal study will have to be carried out to determine the maximal current usable for the piezoresistive measurement.

These studies should allow, at the end of the thesis, to propose more efficient nano-gauges, as well as their manufacturing process. The integration of this process will be studied to allow the realization of a complete sensor based on this optimized piezoresistive transduction.

  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, Instrumentation, DCOS, Leti
  • Laboratory : DCOS / Leti
  • CEA code : SL-DRT-18-0781
  • Contact : antoine.nowodzinski@cea.fr
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