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Extreme elastic deformation of semiconductor materials for optoelectronic applications

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Start date : 1 October 2018

offer n° SL-DRT-18-0998

Extreme elastic deformation of materials has been proven to modify their physical properties paving the way to numerous innovative applications. The goal of this thesis consists in the homogeneous deformation of a crystalline film over a macroscopic surface up to levels never obtained so far by other methods. For semiconductors materials, such a deformation allows for an important modification of optical and electronic properties: For instance, the charge carrier mobility can be significantly enhanced in silicon under tensile strain while the band structure of germanium undergoes various modifications when exposed to strain. High tensile strain levels have led to change this indirect semiconductor into a new material in the sense of a quantitative (band gap) and qualitative (indirect-direct transformation) modification of electronic properties.

The intention of this thesis topics is to obtain the quantitative control of elastic strain imposed in a germanium crystalline film and to produce a proof of concept material for innovative industrial applications

  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, Solid state physics, surfaces and interfaces, FMNT, LTM
  • Laboratory : FMNT / LTM
  • CEA code : SL-DRT-18-0998
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