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Improvement of performance X and gamma-ray imaging by identification of semiconducting detector parameters

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Start date : 1 October 2019

offer n° SL-DRT-19-0796

Our laboratory designs X and gamma-ray imaging systems for medical imaging or luggage control. We use CdTe or CdZnTe-based detectors that are sensitive to five physical parameters of the interaction: deposited energy E, interaction time T and the 3-dimensional position XYZ. These parameters are estimated by real-time analysis of anode electronics signals.

These detectors have been significantly improved in recent years but some limits remain, especially those due to the non-uniformity of the response due to physical properties of the material. The goal of this Ph.D. internship is to overcome these limits by a detailed modelling and characterization of the actual detector response. The identification of internal physical parameters of the detector would allow to optimize estimation of interaction location, time and energy.

The student should have a background in mathematics, statistics or physics and a high affinity for multi-disciplinary research.

  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, Instrumentation, DOPT, Leti
  • Laboratory : DOPT / Leti
  • CEA code : SL-DRT-19-0796
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