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Design, fabrication and characterization of microlasers for data communications

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Start date : 1 October 2019

offer n° SL-DRT-20-1013

Needs for high-speed datacommunications has increased tremendously these last years. Optical links, usually used for long distance communications, are now used for shorter distances in data centers, for instance between racks or within a rack.

Silicon photonics components are excellent candidates for these short distances communications since they are low cost and highly performant. Moreover, CMOS fabrication environment brings excellent fabrication yield, and reliable testing/packaging capabilities. Nevertheless, the silicon being an indirect bandgap material, cannot emit light efficiently, thus, semiconductor lasers are generally fabricated using a III-V material (direct bandgap material, i.e. InP, GaAs), eventually added to the Si-photonics circuit. CEA-Leti expertise in transfer layer technologies by direct bonding is used to realize hybrid III-V on Si photonics circuits leading to fully integrated devices.

This PhD work aims at developing new solutions for the design and fabrication of micro lasers adapted to very short communications (inter or intra chips) with high compactness and high modulation speed. These new devices rely on a CMOS compatible fabrication process flow and original design. The PhD student will be in charge of (i) microlasers design using the available software in the laboratory, (ii) microlasers fabrication relying on CEA-Leti technological platform and (iii) electro-optically characterization of these new components.

  • Keywords : Engineering sciences, Technological challenges, Electronics and microelectronics - Optoelectronics, Photonics, Imaging and displays, DOPT, Leti
  • Laboratory : DOPT / Leti
  • CEA code : SL-DRT-20-1013
  • Contact : karim.hassan@cea.fr
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