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Mass-transport degradation in interconnects, toward a predictive modeling

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Start date : 1 February 2018

offer n° PsD-DRT-18-0024

3D integration involves vertically stacking of several integrated circuits and establishing electrical connections between them. Although 3D interconnect technologies have obvious advantages and their manufacturing process has almost reached the status of mass production, there are several reliability issues, as is often the case in emerging technologies. Electromigration is one of those concerns. A failure related to electromigration is generally related to a high current density that flows in a metal interconnection. This phenomenon induces the nucleation of cavities in the metal line and their growth essentially leads ultimately to open circuits. The most viable solution for fine understanding of the electromigration degradation is to use numerical simulations based on physical models. This tool provides designers/reliability engineers with complementary information to experimental tests to better understand the causes and kinetics of the electromigration degradation to improve the design and manufacture of more reliable interconnects. The model (nucleation and void growth) will be implemented in the COMSOL software. The implementation of the phase field approach will be required for the void growth phase. The results obtained will be compared with those obtained experimentally to verify the robustness of the numerical model and the defined hypotheses. This model will be improved by taking into account the microstructure and/or, in the particular in the case of alloys, the evolution of intermetallic compounds (IMC) as a function of temperature, electric current and time.

  • Keywords : Engineering science, Materials and applications, Mathematics - Numerical analysis - Simulation, DCOS, Leti
  • Laboratory : DCOS / Leti
  • CEA code : PsD-DRT-18-0024
  • Contact : stephane-nico.moreau@cea.fr
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