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Innovative GaN-on-Si power diode architectures for improved high current performance

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Start date : 1 March 2018

offer n° PsD-DRT-18-0027

Lateral GaN diodes, based upon a HEMT-type architecture (similar to GaN HEMT transistors) have been developed during several years by industrial (Transphorm, Panasonic…) and research (LETI, IMEC…) institutes. LETI has namely processed 650V lateral diodes using a 200mm GaN on Si epitaxy process with state of the art performance. Such performance is at the level of SiC diodes regarding low forward on-resistance and reduced reverse leakage current or high breakdown voltages. However, as the forward conduction is lateral and takes place within a two dimensionnal electron gas, such devices withstand very limited levels of current surges in comparison to SiC vertical diodes (10 times the nominal diode current during 10µs to 10ms).

Based upon existing componants and preliminary studies, LETI wishes to developp an innovative GaN-on-Si power diode architecture, allowing to achieve the same performance as those displayed by SiC diodes (namely JBS diodes: Junction Barrier Schottky Diodes), by using the possibilities offered by current GaN-on-Si technologies and those being currently developed.

  • Keywords : Engineering science, Electronics and microelectronics - Optoelectronics, Solid state physics, surfaces and interfaces, DCOS, Leti
  • Laboratory : DCOS / Leti
  • CEA code : PsD-DRT-18-0027
  • Contact : marie-anne.jaud@cea.fr
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