News : Emerging materials and processes for nanotechnologies and microelectronics

The post-doctoral researcher will focus on the investigation of AFE layers based on HfO2 and/or ZrO2 obtained by ALD (Atomic Layer Deposition), which will be able to work as high-k dielectrics for high-density antiferroelectric (AFE) capacitances (>20 J.cm-3). For understanding and optimizing the AFE capacitances, it is mandatory to relate the structural, micro-structural and chemical […] >>

Straining the crystal lattice of a semiconductor is a very powerful tool enabling controlling many properties such as its emission wavelength, its mobility…Modulating and controlling the strain in a reversible fashion and in the multi% range is a forefront challenge. Strain amplification is a rather recent technique allowing accumulating very significant amounts of strain in […] >>

The objective is to design a 2D matrix structure for quantum computing on silicon in order to consider structures of several hundred physical Qubits. In particular the subject will be focused on: – The functionality of the structure (Coulomb interaction, RF and quantum) – Manufacturing constraints (simulation and realistic process constraint) – The variability of […] >>

Improving the performance of power electronics components is a major challenge for reducing our energy consumption. Diamond appears as the ultimate candidate for power electronics. However, the small dimensions and the price of the substrates are obstacles to the use of this material. The main objective of the work is to overcome these two difficulties […] >>

In the Leti campus, the silicon technology division aims to define, develop, and process materials for advanced electrical device integration. In particular, we are studying advanced thin film deposition, on vacuum equipment and at angstrom scale. This post-doctoral position is part of a project including multiple French laboratories; the objective is to explore the applicative […] >>