Gallium nitride nanowires could have bright future in LEDs

Categorie(s) : Life @ MINATEC, News, Research

Published : 6 October 2014

Researchers from INAC and ESRF have teamed up with peers in Madrid to study the correlation between the chemical composition of a gallium nitride (GaN) nanowire and the temporal resolution of the wire’s optical response. To do so, they used new synchrotron instrumentation for fluorescence, diffraction, and photoluminescence.
The new equipment offers spatial resolution of under 100 nm and temporal resolution of less than 50 ps. GaN nanowires “sheathed” in InGaN/GaN quantum wells emit blue light when exposed to a flash of X-ray radiation. The light can then be correlated to the wells’ indium composition and the position of the probe on the wire.
This advanced characterization technique could, for example, be used by start-ups that produce this type of nanowire for LEDs.
The research was published in Advanced Materials under ID code: DOI: 10.1002/adma.201304345.




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