Phase-change memory now requires less current

Categorie(s) : MINATEC, News, Research

Published : 3 December 2012

Phase-change memory is a type of fast, cheap, and non-volatile memory whose only drawback is its high programming current requirement, which limits miniaturization potential and maximum density. However, Leti researchers have obtained promising results from a new “confined structure” phase-change memory architecture that allows for 50 nm chips—substantially smaller than the 300 nm currently available with standard plug architecture.
This breakthrough was achieved by combining e-beam lithography with an atomic thin film deposition process developed by ASM International N.V. and a special chemical-mechanical polishing process. The confined structure architecture uses the phase-change material GeSbTe, and will be developed further to be compatible with tomorrow’s sub-45 nm technology nodes.

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