Rethinking resistive memory
Categorie(s) : News, Research
Published : 3 October 2016
Resistive memory (ReRAM) is a thousand times faster than flash memory and will likely replace flash in coming years. Leti is already working on ReRAM with industrial R&D partners, and has designed a tool to improve memory performance that calculates the main ReRAM design constraints (some of which are in conflict with others).
The calculator leverages data like the technology node (28 nm, 14 nm, etc.), memory cell write time, current, voltage, and total memory capacity to determine configurations compatible with the target performance. Output includes elementary matric size, total component surface area, and energy consumption. The tool was used experimentally on a 128-Gb-capacity component with a data rate of 4 Gb/s.