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October 22 2019

Spintronic samples design and electron optics for in operando Magnetic imaging

Electron Holography is an advanced technique of Transmission Electron Microscopy that consists in reconstructing the full electron wave to access its phase. The phase of an electron wave is modulated by the presence of electro-magnetic fields that may be quantitatively mapped, once the phase is obtained. Beyond the possibility of describing magnetism (and more particularly […] >>

October 22 2019

Magnetic MRAM memory and magnetic field sensor: multi-functionality for 3D assembly

Magnetic non-volatile memory (MRAM) is a technology being developed at Spintec. This type of memory associates non-volatility with fast switching of the order of ns. Switching the magnetization direction the storage layer results in cell resistance changes that can be greater than 100%. This switching depends on the application of a current pulse and also […] >>

October 22 2019

A novel process to realize 4H-SiC nanowire arrays for biomedical applications

SUJET STAGE Master 2 ou Projet de Fin d’Etudes: A novel process to realize 4H-SiC nanowire arrays for biomedical applications The arrays of vertical nanopillars and nanowires (NW) are highly interesting for various applications. Such arrays are natural candidates for two-dimensional photonic crystals.In addition, the pitch between pillars could influence biological cell adhesion. A pillar […] >>

October 21 2019

Electrodes for integrated optical circuits: Application to dielectrophoresis

Master thesis / PFE   (5 to 6 month) Electrodes for integrated optical circuits: Application to dielectrophoresis IMEP-LaHC is one of the leading laboratories in the field of integrated optics, and more specifically of photonics on glass. Striving for innovation, one of our goals is to fabricate integrated devices dedicated to sensing applications such as bacteria […] >>

October 18 2019

MRAM based neuromorphic cell for Artificial Intelligence

Applications in artificial intelligence architectures require cell elements that can take multiple states based on different cell inputs. Hardware realizations of such elements can also be realized on magnetic non-volatile memory (MRAM) cells. This technology being developed at Spintec, associates non-volatility with fast switching of the order of a few nanoseconds. In conventional binary memory […] >>
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