STT-MRAM memory cells under under the microscope
Categorie(s) : Life @ MINATEC, News, Research
Published : 5 April 2021
For the past four years, Spintec has been working on a STT-MRAM memory point geometry that eliminates an etching step that degrades the magnetic layer. Their research required in-depth knowledge of the magnetic behavior of the memory points, which are deposited on 230 nm pillars spaced 400 nm apart. So, they went to the Nanocharacterization Platform (PFNC) to use the Titan™ Ultimate transmission electron microscope.
The electron-holography images obtained showed that if memory points absorb the magnetic flux generated by adjacent points, they “talk” to each other. However, if they line up in the same direction when a magnetic field is applied, the memory works as intended. The magnetic layer is deposited on the substrate in between the pillars. The Titan™ images showed that the magnetic layer’s large surface area allows it to absorb the magnetic flux radiated by memory points.