STT-MRAM memory gets higher write speeds

Categorie(s) : News, Research

Published : 6 February 2017

Researchers at Spintec have achieved higher STT-MRAM write speeds with lower electrical write voltage. They did it by introducing easy cone anisotropy into the storage layer; this causes a 10° to 15° misalignment between the initial magnetism of the storage layer (switchable) and the reference layer. This initial angle makes reversing magnetism faster and easier when writing the memory point. Usually, intrinsically-random (and therefore uncontrollable) heat fluctuations determine the initial angle required for reversing magnetism.

Easy cone anisotropy is obtained using special magnetic materials and annealing conditions.


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