News : nanotech

New optoelectronic components like single-photon sources leverage semiconducting quantum dots integrated into a photonic structure. The sources are generally randomly distributed across a surface within the structure. Knowing the sources’ positions, however, is important to understanding and improving component performance. Researchers at INAC and Institut Néel developed a novel technique to map the sources. They […] >>

As part of a partnership with international certification agency Bureau Veritas, Leti developed a test bench to verify the security of connected objects for industry, healthcare, transportation, and more generally, the Internet of Things. The P-SCAN test bench is the world’s first automated system that can detect potential vulnerabilities at the physical interfaces of industrial […] >>

Researchers at INAC recently synthesized homogeneous three-atomic-layer MoSe2 on a large scale using molecular beam epitaxy. Like other transition metal dichalcogenides (TMDs), MoSe2 is a two-dimensional semiconductor that offers vast potential for applications in electronics, spintronics, and optoelectronics. Producing the material by exfoliation from bulk crystal using adhesive tape does not deliver consistent enough quality […] >>

Power components now have their own transistor. Researchers at Leti completed the first-ever 600 V/100 A normally-off MIS-HEMT (metal-insulator-semiconductor high-electron-mobility transistor) offering performance compatible with the requirements of power electronics. In addition, the transistor can operate at 200 °C and can be manufactured at a reasonable cost. A 3 micron–4 micron GaN layer was deposited […] >>

INAC recently made a significant advance toward using spin-orbit coupling in transistors as the result of research conducted in conjunction with CNRS Palaiseau and Jülich Research Center of Germany. As its name indicates, spin-orbit coupling “couples” an electron’s momentum and spin. A new type of MRAM (magnetoresistive RAM) memory potentially capable of pushing back current […] >>