Ternary oxide synthesis used to study electrical properties

Categorie(s) : News, Research

Published : 6 October 2014

Ternary oxides (In-X-Zn-O) are visibly-transparent semiconductors, making them promising candidates for optoelectronic applications. Researchers at Liten synthesized fourteen such oxides using a sol-gel method in order to study their electrical properties.
The researchers worked with IMEP-LAHC to look at carrier mobility, which turned out to degrade exponentially as the number of defects at the oxide-insulator interface increased. The defect density varied from 1 to 10 depending on the type of metal—gallium, antimony, tin, etc.—used as a dopant (X). The results were interpreted using the percolation theory of behavior in random environments.
Researchers in Japan and South Korea are also working on ternary oxides. However, this is the first time that a systematic study of this type has been completed.

Contact: mohammed.benwadih@cea.fr; gerard.ghibaudo@minatec.inpg.fr



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