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January 01 2023

Development of innovative etching processes for the integration of ferroelectric materials in non-volatile memories

Today, memories are once again a priority for two reasons: data production is growing exponentially. Data storage and transfer consumes up to 90% of the energy in computing systems. Non-volatile memories, which retain information when not powered, are needed to limit energy consumption. Ferroelectric memories (FeRAM or FRAM) are one of the emerging non-volatile memory […] >>

January 01 2023

Resonant antenna sensors for harsh environments

Microsystems sensors (MEMS) are the interface between the physical world and the digital world, and they are present today in most components and systems. A major challenge is the development of sensors that can be interrogated remotely, without electronic circuits or batteries, which will make it possible to envisage new applications as for example in […] >>

January 01 2023

Deep investigation of GaN/dielectrics gate stack through ab-initio simulations (DFT)

MOS-HEMT devices have erased a lot of interest in the state of art and specifically for compact and high power density applications. Thanks to the presence of a high bi-dimensional gas electron (2deg) at the AlGaN/GaN heterojunction and the very promising GaN thermal resistance and high mobility, these transistors are capable of supporting high currents […] >>

January 01 2023

Development of nanodielectrics for power electronics

Power electronics used in particular for the electric vehicle requires the fabrication of smaller and smaller devices able of sustaining high currents and high working voltages. The miniaturization of these components requires the development of new dielectric materials with high breakdown field. A promising approach is to combine the high dielectric constant of inorganic oxides […] >>

January 01 2023

Impact of mechanical properties of thin layers in SmartCut technology.

The SmartCut technology is nowdays widely used on the manufacture of innovative substrates such as SOI (Silicon-on-Insulator). The fundamental physical phenomena underlying this process are still being actively studied. In particular, the catastrophic fracture step, which allows the transfer of a very thin layer of a donor substrate onto a base or receiver substrate. An […] >>
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