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Global inversion symmetry or time reversal symmetry have been long regarded as fundamental ingredients to form a superconducting state. However nowadays, several systems have been found which are superconducting even though they break locally inversion symmetry, sometimes together with broken time reversal symmetry. Prominent examples are the uranium based ferromagnetic superconductors URhGe and UCoGe (breaking […] >>

The recent discovery of ferroelectricity in hafnium oxide (HfO2) thin films generates a strong interest for ultra-low power non volatile memories, in which the information is stored by the orientation of the electric dipoles in this material. Among those memories, the ferroelectric field effect transistor (FeFET) is quite appealing to combine logic and memory operations […] >>

For microelectronics industry, SOI (Silicon on Insulator) structure elaboration for the new generation of integrated circuits fabrication relies on wafer bonding by molecular adherence technology. It is based on direct bonding between two surfaces thanks to plasma activation. In the Ph.D.’s framework, we propose to study and to develop new activation processes by plasma in […] >>

Simulations using molecular dynamics (MD) are particularly suitable to study the physical properties of complex materials at the atomic scale but require an accurate description of their potential energy surface (PES). In the past couple of years, much progress has been made in the development of machine learning interatomic potentials (ML-IP) trained on ab initio […] >>

The recent discovery of HfO2 ferroelectric properties generates a strong interest for novel non-volatile memory technologies. Among them, HfO2-based Ferroelectric Tunnel Junctions (FTJ) are resistive memories in which the electronic transport, and thus the device conductance, is modulated by the orientation of ferroelectric dipoles within the HfO2 layer. Actually, HfO2-based FTJs are envisaged for mimicking […] >>