News : DPFT

The post-doctoral researcher will focus on the investigation of AFE layers based on HfO2 and/or ZrO2 obtained by ALD (Atomic Layer Deposition), which will be able to work as high-k dielectrics for high-density antiferroelectric (AFE) capacitances (>20 J.cm-3). For understanding and optimizing the AFE capacitances, it is mandatory to relate the structural, micro-structural and chemical […] >>

In the Leti campus, the silicon technology division aims to define, develop, and process materials for advanced electrical device integration. In particular, we are studying advanced thin film deposition, on vacuum equipment and at angstrom scale. This post-doctoral position is part of a project including multiple French laboratories; the objective is to explore the applicative […] >>

The advance of LED micro displays requires high resolution and brightness for a wide range of applications such as smart phone or virtual reality. These new products specifications raise challenges in terms of pixels size and density, material integration and fabrication techniques. In this context, Gallium Nitride has been extensively used and studied for its […] >>

In this subjet we will develop off-axis electron holography for the measurement of electrostatic fields in AlGaN quantum well structures for UV emission. Electron holography measures the phase of electrons from an interference pattern. As the phase change of the electrons is proportional to the potentiel in the specimen, then this can be used to […] >>

For microelectronics industry, SOI (Silicon on Insulator) structure elaboration for the new generation of integrated circuits fabrication relies on wafer bonding by molecular adherence technology. It is based on direct bonding between two surfaces thanks to plasma activation. In the Ph.D.’s framework, we propose to study and to develop new activation processes by plasma in […] >>